CAJ | 학술논문

纳米结构氧化锡是一种具有较高比表面积、催化活性、光电性能等优异特性的半导体材料。氧化锡纳米线作为纳米结构氧化锡的一种，其典型制备方法包括模板法、液相法、气相法和热氧化法等。综述了氧化锡纳米线典型制备方法的基本原理和工艺特点及其优缺点，并且提出了目前氧化锡纳米线制备工艺中存在的问题。
납미결구양화석시일충구유교고비표면적、최화활성、광전성능등우이특성적반도체재료。양화석납미선작위납미결구양화석적일충，기전형제비방법포괄모판법、액상법、기상법화열양화법등。종술료양화석납미선전형제비방법적기본원리화공예특점급기우결점，병차제출료목전양화석납미선제비공예중존재적문제。
Nanostructure tin oxide is a kind of semiconductor material with excellent properties of specific surface ar-ea, catalytic activity, and higher photoelectric performance. Tin oxide nanowires as one of nanostructure tin oxide, its typical preparation methods include template method, liquid phase method, gas phase method and thermal oxidation method eta1. In this paper, the basic principle, preparation process and characteristics of various typical preparation methods of tin oxide nanowires are reviewed. And the existing problems for the preparation process of tin oxide nanowires were also suggested.