应用光学
應用光學
응용광학
JOURNAL OF APPLIED OPTICS
2015年
1期
109-113
,共5页
苏颖%陈俊霞%张勇%张成群%龚涛
囌穎%陳俊霞%張勇%張成群%龔濤
소영%진준하%장용%장성군%공도
锗晶体%码盘%分划制作工艺
鍺晶體%碼盤%分劃製作工藝
타정체%마반%분화제작공예
Ge crystal%optical encoder%reticle pattern processing technology
为了在锗晶体光坯上制作出满足要求的码盘图案,分别采用正性光刻胶和负性光刻胶,先镀膜后照相和先照相后镀膜的工艺路线进行工艺实验,并对实验结果进行分析,得出结论:用负性光刻胶按先照相后镀膜的工艺路线为锗晶体光码盘分划制作工艺的最佳方案。实验结果表明:加工出的图案明暗对比度大、边缘不均匀性小于0.008mm,可实际应用于锗晶体上分划图案的制作。
為瞭在鍺晶體光坯上製作齣滿足要求的碼盤圖案,分彆採用正性光刻膠和負性光刻膠,先鍍膜後照相和先照相後鍍膜的工藝路線進行工藝實驗,併對實驗結果進行分析,得齣結論:用負性光刻膠按先照相後鍍膜的工藝路線為鍺晶體光碼盤分劃製作工藝的最佳方案。實驗結果錶明:加工齣的圖案明暗對比度大、邊緣不均勻性小于0.008mm,可實際應用于鍺晶體上分劃圖案的製作。
위료재타정체광배상제작출만족요구적마반도안,분별채용정성광각효화부성광각효,선도막후조상화선조상후도막적공예로선진행공예실험,병대실험결과진행분석,득출결론:용부성광각효안선조상후도막적공예로선위타정체광마반분화제작공예적최가방안。실험결과표명:가공출적도안명암대비도대、변연불균균성소우0.008mm,가실제응용우타정체상분화도안적제작。
In order to process code disc pattern on the Ge crystal base met the needs ,we did the technological experiments ,through adopting the positive photoresist and negative photoresist , in the technological ways that coating before exposure and exposure before coating ,respective‐ly .We analyzed the measurement results ,and came to the conclusion that the optimum matc‐hing scheme of reticle pattern processing technology for Ge crystal optical encoder was adop‐ting the negative photoresist in accordance with the exposure before coating .Experimental re‐sults show that the finished graphic pattern has obvious contrast ,the asymmetry distribution of edge is lower than 0 .008 mm .It can be applied to the manufacture of the reticle pattern on Ge base .