CAJ | 학술논문

为了满足 GaAs 微波单片晶体管模型参数精确提取需求，论文开展了在 GaAs 衬底上制作专用 TRL 校准件的研究工作，该专用校准件在设计过程中，综合考虑了介质材料、测量端口探针至微带线过渡等要素，使校准后在片 S 参数测量的参考平面更加接近晶体管管芯，从而获得了微波单片晶体管真正管芯模型参数。为了对校准效果进行验证，制作了在片无源检验件，通过测量结果与电磁场仿真数值的对比，证实了该专用校准件满足模型参数提取的测量要求。
위료만족 GaAs 미파단편정체관모형삼수정학제취수구，논문개전료재 GaAs 츤저상제작전용 TRL 교준건적연구공작，해전용교준건재설계과정중，종합고필료개질재료、측량단구탐침지미대선과도등요소，사교준후재편 S 삼수측량적삼고평면경가접근정체관관심，종이획득료미파단편정체관진정관심모형삼수。위료대교준효과진행험증，제작료재편무원검험건，통과측량결과여전자장방진수치적대비，증실료해전용교준건만족모형삼수제취적측량요구。
On‐wafer TRL calibration standards on GaAs substrate for precision modeling on‐wafer transistors is de‐signed .The dielectric material and probe tips to the microstrip line structure on each port are taken into account during the design of these standards ,so the system reference plane after calibration is near the on‐wafer transistor chips .In order to validate the calibration results ,passive on‐wafer validation kits are manufactured .The experiment results show that the sys‐tem using the dedicated TRL standards to calibrate behaved is closer to the electromagnetic simulation values than the use of commercial standards ,and can achieve accurate extraction of the on‐wafer transistor model .