CAJ | 학술논문

针对Xenics公司的一款InGaAs探测器,根据载荷工作环境要求,轨道高度700km,在轨工作3年的总剂量辐射为2 krad( Si),技术指标要求探测器的抗总剂量辐射能力要在10 krad( Si)以上。因此对其进行总剂量为30 krad( Si)的60Co-γ辐射试验[1-2]。对比辐照前后探测器的参数变化,发现随着总剂量的增加,探测器的暗电流有所增大,响应度有所降低,整体性能略有下降,但满足指标要求。分析γ辐射对探测器影响的内在机理,为后续InGaAs探测器抗总剂量辐射加固提供依据和参考。
침대Xenics공사적일관InGaAs탐측기,근거재하공작배경요구,궤도고도700km,재궤공작3년적총제량복사위2 krad( Si),기술지표요구탐측기적항총제량복사능력요재10 krad( Si)이상。인차대기진행총제량위30 krad( Si)적60Co-γ복사시험[1-2]。대비복조전후탐측기적삼수변화,발현수착총제량적증가,탐측기적암전류유소증대,향응도유소강저,정체성능략유하강,단만족지표요구。분석γ복사대탐측기영향적내재궤리,위후속InGaAs탐측기항총제량복사가고제공의거화삼고。
According to environmental requirement of payload,the total dose irradiation is 2 krad( Si) when the orbit-al altitude is 700km and work period is 3 years. So the InGaAS detector of the Xenics company should have the a-bility of 10 krad( Si) resistant radiation. In order to study the characteristics of this InGaAs detector,irradiation test was conducted using a Cobalt60-γ with the total dose of 30 krad( Si) . Main parameters of the detector was studied before and after irradiation. After irradiation,the dark current increases and response of detector decreases with the irradiation dose increasement,which indicates that performance of the detector becomes worse with increasing irradi-ation dose. It is analyzed that the damage mechanisms of detector afterγirradiation,there results provide reference for the total dose resistant irradiation hardening in future.