CAJ | 학술논문

提出了一种新的电路结构，通过两种运行模式的切换，可以在降低CMOS智能温度传感器不匹配误差的同时，保证输出有尽可能高的动态范围。理论分析得出，相对于传统结构，新结构的不匹配误差能减小66%以上。0.18μm工艺环境下的仿真结果表明，在-55℃~125℃的温度范围内，输出能达到90%左右的动态范围，和Pertijs提出的改进结构相比，有较大幅度的提高。芯片实测结果在-10℃~100℃的温度范围内证实了这个结论。
제출료일충신적전로결구，통과량충운행모식적절환，가이재강저CMOS지능온도전감기불필배오차적동시，보증수출유진가능고적동태범위。이론분석득출，상대우전통결구，신결구적불필배오차능감소66%이상。0.18μm공예배경하적방진결과표명，재-55℃~125℃적온도범위내，수출능체도90%좌우적동태범위，화Pertijs제출적개진결구상비，유교대폭도적제고。심편실측결과재-10℃~100℃적온도범위내증실료저개결론。
A new circuit structure which can switch between two operational modes is proposed to reduce the mis-match errors of CMOS smart temperature sensors and ensure a high dynamic range of the output. The new structure can reduce more than 66%of the mismatch error in contrast to traditional circuit by theoretical analysis. The simula-tion between -55 ℃ and 125℃ based on 0.18μm process shows that a dynamic range of about 90% which is lar-ger than the output of Pertijs’ structure can be acquired using this new structure. This conclusion is verified by chip testing result between -10 ℃ and 100 ℃.