电子器件
電子器件
전자기건
JOURNAL OF ELECTRON DEVICES
2015年
1期
18-22
,共5页
带隙基准%混合模式%曲率校正%低温漂
帶隙基準%混閤模式%麯率校正%低溫漂
대극기준%혼합모식%곡솔교정%저온표
bandgap reference%mixed-mode%curvature correction%low temperature-drift
基于OKI 0.5μm BiCMOS工艺,设计了一种低温漂的带隙基准电压源。对传统基准源的电压模式输出级进行了改进,使之形成同时包含电压模式和电流模式的混合模式输出级,提高了温度补偿的灵活性。同时设计了一种基于分段线性补偿技术的高精度曲率校正电路,精确地对基准电压的高阶温度分量进行修调。 HSPICE仿真结果表明,在5 V的电源电压下,基准输出电压为1.2156 V,在-40℃~125℃温度范围内,基准电压的温度系数为0.43×10-6/℃,低频时电路电源抑制比低于-83 dB。电源电压在3.8 V~10 V范围内变化时,基准源的线性调整率为9.2μV/V。
基于OKI 0.5μm BiCMOS工藝,設計瞭一種低溫漂的帶隙基準電壓源。對傳統基準源的電壓模式輸齣級進行瞭改進,使之形成同時包含電壓模式和電流模式的混閤模式輸齣級,提高瞭溫度補償的靈活性。同時設計瞭一種基于分段線性補償技術的高精度麯率校正電路,精確地對基準電壓的高階溫度分量進行脩調。 HSPICE倣真結果錶明,在5 V的電源電壓下,基準輸齣電壓為1.2156 V,在-40℃~125℃溫度範圍內,基準電壓的溫度繫數為0.43×10-6/℃,低頻時電路電源抑製比低于-83 dB。電源電壓在3.8 V~10 V範圍內變化時,基準源的線性調整率為9.2μV/V。
기우OKI 0.5μm BiCMOS공예,설계료일충저온표적대극기준전압원。대전통기준원적전압모식수출급진행료개진,사지형성동시포함전압모식화전류모식적혼합모식수출급,제고료온도보상적령활성。동시설계료일충기우분단선성보상기술적고정도곡솔교정전로,정학지대기준전압적고계온도분량진행수조。 HSPICE방진결과표명,재5 V적전원전압하,기준수출전압위1.2156 V,재-40℃~125℃온도범위내,기준전압적온도계수위0.43×10-6/℃,저빈시전로전원억제비저우-83 dB。전원전압재3.8 V~10 V범위내변화시,기준원적선성조정솔위9.2μV/V。
A bandgap voltage reference with low temperature-drift was proposed based on OKI 0. 5 μm BiCMOS process. The voltage-mode output stage of traditional reference was improved and a mixed-mode output stage which comprised both voltage and current modes was introduced. Thus the flexibility of temperature compensation was im-proved. Meanwhile a high-precision curvature correction circuit based on piecewise linear compensation technology was designed to trim the high-order temperature components of the reference voltage. Simulation using HSPICE soft-ware showed that,the output reference voltage was 1.2156 V under the 5 V power supply and its temperature coeffi-cient was 0.43×10-6/℃ at the range of -40 ℃~125 ℃. The power supply rejection ratio( PSRR) was lower than-83 dB at low frequency. Line regulation in the supply range of 3.8 V~10 V was 9.2 μV/V.
