CAJ | 학술논문

实现了一款超宽带低噪声放大器( UWB LNA)。该UWB LNA由输入级、中间级和输出级组成。在输入级,采用两个共栅配置构成了噪声抵消技术,减少了噪声,在此结构基础上进一步采用了跨导增强技术,提高了增益。同时插入的电感Lin提高了LNA在宽带范围内的增益平坦度。中间级放大器,在漏极并联电感产生零点,提高了LNA的带宽。输出级为源极跟随器,较好实现了LNA的阻抗匹配。基于0.18μm TSMC CMOS工艺仿真验证表明,在4 GHz~10 GHz频带范围内,电压增益( S21)为(19.2±0.3)dB,噪声系数(NF)介于2.1 dB~2.4 dB之间,输入、输出反射系数(S11、S22)均小于-10 dB。在9 GHz时,输入三阶交调点(IIP3)达到-7 dBm。在1.8 V的电源电压下,功耗为28.6 mW。
실현료일관초관대저조성방대기( UWB LNA)。해UWB LNA유수입급、중간급화수출급조성。재수입급,채용량개공책배치구성료조성저소기술,감소료조성,재차결구기출상진일보채용료과도증강기술,제고료증익。동시삽입적전감Lin제고료LNA재관대범위내적증익평탄도。중간급방대기,재루겁병련전감산생영점,제고료LNA적대관。수출급위원겁근수기,교호실현료LNA적조항필배。기우0.18μm TSMC CMOS공예방진험증표명,재4 GHz~10 GHz빈대범위내,전압증익( S21)위(19.2±0.3)dB,조성계수(NF)개우2.1 dB~2.4 dB지간,수입、수출반사계수(S11、S22)균소우-10 dB。재9 GHz시,수입삼계교조점(IIP3)체도-7 dBm。재1.8 V적전원전압하,공모위28.6 mW。
An ultra-wideband low noise amplifier ( UWB LNA) was presented. The UWB LNA is composed of input stage,intermediate stage and output stage. At input stage,noise cancellation structure constructed by two common-gate configuration is utilized to decrease noise figure,Gm-boost structure is used to enhance gain,the inserted inductor Lin improves the gain flatness of the LNA within the wideband. At intermediate stage,the bandwidth is broaden due to the zero generated by shunt inductor at the drain of amplifier. The output stage is a source follower which provides a good output matching easily. Based on 0.18μm standard CMOS process,the LNA is verified. The voltage gain( S21 ) main-tains 19.2 dB± 0.3 dB,noise figure(NF)swings from 2.1 dB to 2.4 dB,input reflection(S11)and output reflection (S22)are less than -10 dB within the range of 4 GHz~10 GHz. The input intercept point(IIP3)is-7 dBm at 9 GHz. The LNA consumes only 28.6 mW from a 1.8 V voltage.