中南大学学报（英文版）
中南大學學報（英文版）
중남대학학보（영문판）
JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY(ENGLISH EDITION)
2015年
2期
430-436
,共7页
王斌%胡辉勇%张鹤鸣%宋建军%张玉明
王斌%鬍輝勇%張鶴鳴%宋建軍%張玉明
왕빈%호휘용%장학명%송건군%장옥명
strained Si1-xGex%biaxial stress%hole scattering rate%effective mass
Based on the Fermi’s golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate (SR) in strained Si1-xGex/(100)Si was presented, which takes into account a variety of scattering mechanisms, including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1?xGex/(100)Si also decreases obviously with increasing Ge fraction (x). Moreover, the total SR continues to show a constant tendency whenxis less than 0.3. In comparison with bulk Si, the total SR of strained Si1?xGex/(100) Si decreases by about 58%.
