电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2015年
2期
62-65
,共4页
带隙基准源%曲率补偿%低温漂%低功耗%高精度%放大器钳位
帶隙基準源%麯率補償%低溫漂%低功耗%高精度%放大器鉗位
대극기준원%곡솔보상%저온표%저공모%고정도%방대기겸위
bandgap reference source%curvature compensation%low temperature drift%low power consumption%high precision%amplifier clamping
基于OKI（冲电气工业株式会社）0.5μm BCD（Bipolar, CMOS and DMOS）工艺，设计了一种带曲率补偿的低温漂低功耗带隙基准电压源。采用放大器钳位的传统实现方式，将一个类指数性质的电流叠加到基准源的核心部分，达到曲率补偿的效果。仿真结果表明，在5 V供电电压下，223~423 K (–50~+150℃)内，基准电压的波动范围为1.175~1.182 V，温漂为2.15×10–6/K，具有较高精度，低频时电路电源抑制比为–64 dB，整体静态电流仅为5.6μA。
基于OKI（遲電氣工業株式會社）0.5μm BCD（Bipolar, CMOS and DMOS）工藝，設計瞭一種帶麯率補償的低溫漂低功耗帶隙基準電壓源。採用放大器鉗位的傳統實現方式，將一箇類指數性質的電流疊加到基準源的覈心部分，達到麯率補償的效果。倣真結果錶明，在5 V供電電壓下，223~423 K (–50~+150℃)內，基準電壓的波動範圍為1.175~1.182 V，溫漂為2.15×10–6/K，具有較高精度，低頻時電路電源抑製比為–64 dB，整體靜態電流僅為5.6μA。
기우OKI（충전기공업주식회사）0.5μm BCD（Bipolar, CMOS and DMOS）공예，설계료일충대곡솔보상적저온표저공모대극기준전압원。채용방대기겸위적전통실현방식，장일개류지수성질적전류첩가도기준원적핵심부분，체도곡솔보상적효과。방진결과표명，재5 V공전전압하，223~423 K (–50~+150℃)내，기준전압적파동범위위1.175~1.182 V，온표위2.15×10–6/K，구유교고정도，저빈시전로전원억제비위–64 dB，정체정태전류부위5.6μA。
Based on OKI 0.5μm BCD process, a low temperature drift and low power consumption bandgap reference voltage source with curvature compensation was designed. With traditional amplifier clamping method, a quasi exponent property current was added up the core part of the reference to achieve curvature compensation effect. Simulation results show that under the power supply voltage of 5 V from 223 K to 423 K, the output reference voltage range is from 1.175 V to 1.182 V, with a temperature drift of about 2.15×10–6/K. The power supply rejection ratio (PSRR) is–64 dB when the reference source is high precision and low frequency;the static current of the reference source is only 5.6μA.
