电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2015年
2期
27-30
,共4页
成丽娟%王守绪%何为%刘慧民%彭永强
成麗娟%王守緒%何為%劉慧民%彭永彊
성려연%왕수서%하위%류혜민%팽영강
银%纳米线%高长径比%模板剂%一步合成%水热法
銀%納米線%高長徑比%模闆劑%一步閤成%水熱法
은%납미선%고장경비%모판제%일보합성%수열법
silver%nanowires%high aspect ratio%template agent%one-pot synthesis%hydrothermal method
高长径比银纳米线是全印制电子技术中的关键材料之一。采用紫外-可见分光光度法研究了银纳米线制备过程中的变化,用 XRD、SEM 研究了产物晶体结构及形貌,讨论了模板剂的用量及溶液 pH 值对纳米银形貌的影响。结果表明,以十六烷基三甲基溴化铵为模板剂,采用一步水热法可制备出长度为50μm、直径为40 nm的银纳米线。在模板剂浓度为5.8×10–3 mol/L、溶液pH 值=11的实验条件下,可获得高长径比为1300的银纳米线。
高長徑比銀納米線是全印製電子技術中的關鍵材料之一。採用紫外-可見分光光度法研究瞭銀納米線製備過程中的變化,用 XRD、SEM 研究瞭產物晶體結構及形貌,討論瞭模闆劑的用量及溶液 pH 值對納米銀形貌的影響。結果錶明,以十六烷基三甲基溴化銨為模闆劑,採用一步水熱法可製備齣長度為50μm、直徑為40 nm的銀納米線。在模闆劑濃度為5.8×10–3 mol/L、溶液pH 值=11的實驗條件下,可穫得高長徑比為1300的銀納米線。
고장경비은납미선시전인제전자기술중적관건재료지일。채용자외-가견분광광도법연구료은납미선제비과정중적변화,용 XRD、SEM 연구료산물정체결구급형모,토론료모판제적용량급용액 pH 치대납미은형모적영향。결과표명,이십륙완기삼갑기추화안위모판제,채용일보수열법가제비출장도위50μm、직경위40 nm적은납미선。재모판제농도위5.8×10–3 mol/L、용액pH 치=11적실험조건하,가획득고장경비위1300적은납미선。
Silver nanowires (Ag NWs) with high aspect ratio were one of the key materials of full printed electronic technology. Transition of reaction solution taken at different reaction time was measured by UV-visible adsorption spectra. Obtained products were characterized with XRD and SEM. Ag NWs (with an average diameter of 40 nm and length at least 50 μm) were synthesized by one-pot hydrothermal method in the presence of cetyltrimethylammonium bromide (CTAB) which acted as structure template. The morphologies of Ag nanostructures were changed by adjusting concentration of CTAB and pH value of reaction solution. High aspect ratio (≈1 300) Ag NWs are obtained when the concentration of CTAB is fixed at 5.8×10–3 mol/L and the pH of solution is 11.