电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2015年
2期
13-16
,共4页
杨晓东%张洁%蒋书文%蒋洪川%张万里
楊曉東%張潔%蔣書文%蔣洪川%張萬裏
양효동%장길%장서문%장홍천%장만리
磁控溅射%电子束蒸发%Al2O3%YSZ%复合薄膜结构%高温绝缘
磁控濺射%電子束蒸髮%Al2O3%YSZ%複閤薄膜結構%高溫絕緣
자공천사%전자속증발%Al2O3%YSZ%복합박막결구%고온절연
magnetron sputtering%electron beam evaporation%Al2O3%YSZ%multilayer thin film%high temperature insulation
采用电子束蒸发、射频磁控溅射、等离子喷涂等方法,在镍基高温合金基底上制备 YSZ(质量分数12%Y2O3稳定的 ZrO2)、Al2O3复合薄膜结构绝缘层,并研究了复合薄膜结构绝缘层在室温到800℃范围内的绝缘特性,以及高温对复合薄膜晶体结构和表面形貌的影响。结果表明:晶态 YSZ/非晶态 YSZ/Al2O3结构绝缘层在室温下的绝缘电阻大于1.2 GΩ,在800℃大气环境下有150 kΩ左右的绝缘电阻。在室温到800℃范围内,随温度升高其绝缘电阻呈近指数下降的变化规律。经过在800℃大气环境中热处理8 h,YSZ的立方相结构未发生改变,Al2O3表面十分致密,表明该复合结构绝缘层薄膜具有良好的高温绝缘性能和稳定性。
採用電子束蒸髮、射頻磁控濺射、等離子噴塗等方法,在鎳基高溫閤金基底上製備 YSZ(質量分數12%Y2O3穩定的 ZrO2)、Al2O3複閤薄膜結構絕緣層,併研究瞭複閤薄膜結構絕緣層在室溫到800℃範圍內的絕緣特性,以及高溫對複閤薄膜晶體結構和錶麵形貌的影響。結果錶明:晶態 YSZ/非晶態 YSZ/Al2O3結構絕緣層在室溫下的絕緣電阻大于1.2 GΩ,在800℃大氣環境下有150 kΩ左右的絕緣電阻。在室溫到800℃範圍內,隨溫度升高其絕緣電阻呈近指數下降的變化規律。經過在800℃大氣環境中熱處理8 h,YSZ的立方相結構未髮生改變,Al2O3錶麵十分緻密,錶明該複閤結構絕緣層薄膜具有良好的高溫絕緣性能和穩定性。
채용전자속증발、사빈자공천사、등리자분도등방법,재얼기고온합금기저상제비 YSZ(질량분수12%Y2O3은정적 ZrO2)、Al2O3복합박막결구절연층,병연구료복합박막결구절연층재실온도800℃범위내적절연특성,이급고온대복합박막정체결구화표면형모적영향。결과표명:정태 YSZ/비정태 YSZ/Al2O3결구절연층재실온하적절연전조대우1.2 GΩ,재800℃대기배경하유150 kΩ좌우적절연전조。재실온도800℃범위내,수온도승고기절연전조정근지수하강적변화규률。경과재800℃대기배경중열처리8 h,YSZ적립방상결구미발생개변,Al2O3표면십분치밀,표명해복합결구절연층박막구유량호적고온절연성능화은정성。
YSZ (mass fraction of 12%Y2O3 stabilized ZrO2), Al2O3 insulating multilayered thin film was fabricated on nickel base alloy substrate by electron beam evaporation,RF magnetron sputtering, plasma spraying and etc. The insulating properties of the multilayered thin films from room temperature to 800℃ were studied, as well as the effects of annealing at high temperature on the crystal structure and surface morphology of insulation layer. The results show that the multilayered thin film of crystalline YSZ/amorphous YSZ/Al2O3 has an insulation resistance more than 1.2 GΩ at room temperature and about 150 kΩ at 800℃ air oven. Ranging from room temperature to 800 ℃, the insulation resistance decreases exponentially while the temperature increases. After annealing at 800 ℃ for 8 h, YSZ cubic phase structure does not change, and the surface of Al2O3 keeps compact. These results suggest that the multilayered thin film has good high temperature insulation performance and stability.