现代电子技术
現代電子技術
현대전자기술
MODERN ELECTRONICS TECHNIQUE
2015年
4期
111-113,117
,共4页
王国胜%谢峰%王俊%王唐林%宋曼%吴浩然%郭进
王國勝%謝峰%王俊%王唐林%宋曼%吳浩然%郭進
왕국성%사봉%왕준%왕당림%송만%오호연%곽진
探测器%紫外光电探测器%铝镓氮%日盲%肖特基势垒
探測器%紫外光電探測器%鋁鎵氮%日盲%肖特基勢壘
탐측기%자외광전탐측기%려가담%일맹%초특기세루
detector%ultraviolet photodetector%AlGaN%solar-blind%Schottky-barrier
研制一种以薄的高阻AlGaN覆盖层作为肖特基势垒增强层的N?AlGaN基金属?半导体?金属(MSM)日盲紫外光电探测器。与无覆盖层的参考器件相比,覆盖高阻AlGaN层后探测器的暗电流大幅度减小。在5 V偏压下,覆盖高阻AlGaN层的光电探测器的暗电流为1.6 pA,响应度为22.5 mA/W,日盲紫外抑制比大于103,探测率为6.3×1010 cm·Hz1/2/W。
研製一種以薄的高阻AlGaN覆蓋層作為肖特基勢壘增彊層的N?AlGaN基金屬?半導體?金屬(MSM)日盲紫外光電探測器。與無覆蓋層的參攷器件相比,覆蓋高阻AlGaN層後探測器的暗電流大幅度減小。在5 V偏壓下,覆蓋高阻AlGaN層的光電探測器的暗電流為1.6 pA,響應度為22.5 mA/W,日盲紫外抑製比大于103,探測率為6.3×1010 cm·Hz1/2/W。
연제일충이박적고조AlGaN복개층작위초특기세루증강층적N?AlGaN기금속?반도체?금속(MSM)일맹자외광전탐측기。여무복개층적삼고기건상비,복개고조AlGaN층후탐측기적암전류대폭도감소。재5 V편압하,복개고조AlGaN층적광전탐측기적암전류위1.6 pA,향응도위22.5 mA/W,일맹자외억제비대우103,탐측솔위6.3×1010 cm·Hz1/2/W。
An n?type AlGaN?based metal–semiconductor–metal(MSM)solar?blind ultraviolet(UV)photodetector(PD) taking thin high?resistive AlGaN cap layer as Schottky?barrier enhancement layer was developed. Compared with the control PDs without the thin cap layer,dark current of PD with high?resistive AlGaN cap layer is significantly small. At the bias voltage of 5 V,dark current of PD with high?resistive AlGaN cap layer is 1.6 pA,its responsivity is 22.5 mA/W,solar?blind/UV rejection ra?tio is more than 103,and detectivity is 6.3×1010 cm·Hz1/2/W.