CAJ | 학술논문

1f 低频电噪声是评估半导体器件质量和寿命的一个重要因素。由于1f 低频电噪声极其微弱，为了检测它，同时最大程度降低放大器的本底噪声，低噪声放大器的设计和实现是至关重要的一个环节。针对1 f 低频电噪声信号的特性，在现有低噪声放大器基础上进行优化改进，设计出一款频率极低的低噪声放大器，在0.1 Hz~100 kHz频率下具有高增益和低噪声特性。仿真结果表明，在10 Hz处噪声系数达到1.80 dB。
1f 저빈전조성시평고반도체기건질량화수명적일개중요인소。유우1f 저빈전조성겁기미약，위료검측타，동시최대정도강저방대기적본저조성，저조성방대기적설계화실현시지관중요적일개배절。침대1 f 저빈전조성신호적특성，재현유저조성방대기기출상진행우화개진，설계출일관빈솔겁저적저조성방대기，재0.1 Hz~100 kHz빈솔하구유고증익화저조성특성。방진결과표명，재10 Hz처조성계수체도1.80 dB。
1 f low frequency electrical noise is the key factor to evaluate quality and service life of semiconductor devices. In order to detect 1 f noise and reduce background noise to a maximum degree,the design and implementation of low?noise amplifier are the vital links because 1 f noise is extremely weak. According to the characteristics of 1 f low frequency electri?cal noise,an extremely low?frequency low?noise amplifier was designed on the basis of optimization of amplifier available. The new amplifier has good performance in high?gain and low?noise at the frequency between 0.1 Hz to 100 kHz. The result of the simulation indicates that the noise factor is 1.80 dB at 10 Hz.