磁性材料及器件
磁性材料及器件
자성재료급기건
JOURNAL OF MAGNETIC MATERIALS AND DEVICES
2015年
1期
26-31
,共6页
常乐%刘颖力%陈大明%王雨
常樂%劉穎力%陳大明%王雨
상악%류영력%진대명%왕우
M型钡铁氧体薄膜%结构%磁性能%微波性能
M型鋇鐵氧體薄膜%結構%磁性能%微波性能
M형패철양체박막%결구%자성능%미파성능
M-type barium ferrite%microstructure%magnetic properties%microwave properties
采用有机金属裂解法在Pt/TiO2/SiO2/Si基板上制备M型钡铁氧体(BaM)薄膜,并着重研究了螯合剂乙二胺四乙酸(EDTA)含量对BaM薄膜结构、磁性和微波性能的影响。研究发现,当EDTA∶(Ba2++Fe3+)=1(摩尔比)时,BaM薄膜形成较多的六角形状晶粒,而且磁性能和微波性能较佳,沿c轴生长的取向度高达0.91,饱和磁化强度Ms为302kA/m(μ0Ms=0.38T),在50GHz时铁磁共振线宽ΔH为22kA/m (277Oe)。这是因为适量的EDTA不仅在溶液挥发时能够阻止金属离子的分离和间歇性的沉淀,并且能够促进成形成均匀的前驱液,从而在前驱液分解时能促进形成BaM,在经过热处理后易形成沿c轴取向、具有六角形状晶粒的BaM薄膜。
採用有機金屬裂解法在Pt/TiO2/SiO2/Si基闆上製備M型鋇鐵氧體(BaM)薄膜,併著重研究瞭螯閤劑乙二胺四乙痠(EDTA)含量對BaM薄膜結構、磁性和微波性能的影響。研究髮現,噹EDTA∶(Ba2++Fe3+)=1(摩爾比)時,BaM薄膜形成較多的六角形狀晶粒,而且磁性能和微波性能較佳,沿c軸生長的取嚮度高達0.91,飽和磁化彊度Ms為302kA/m(μ0Ms=0.38T),在50GHz時鐵磁共振線寬ΔH為22kA/m (277Oe)。這是因為適量的EDTA不僅在溶液揮髮時能夠阻止金屬離子的分離和間歇性的沉澱,併且能夠促進成形成均勻的前驅液,從而在前驅液分解時能促進形成BaM,在經過熱處理後易形成沿c軸取嚮、具有六角形狀晶粒的BaM薄膜。
채용유궤금속렬해법재Pt/TiO2/SiO2/Si기판상제비M형패철양체(BaM)박막,병착중연구료오합제을이알사을산(EDTA)함량대BaM박막결구、자성화미파성능적영향。연구발현,당EDTA∶(Ba2++Fe3+)=1(마이비)시,BaM박막형성교다적륙각형상정립,이차자성능화미파성능교가,연c축생장적취향도고체0.91,포화자화강도Ms위302kA/m(μ0Ms=0.38T),재50GHz시철자공진선관ΔH위22kA/m (277Oe)。저시인위괄량적EDTA불부재용액휘발시능구조지금속리자적분리화간헐성적침정,병차능구촉진성형성균균적전구액,종이재전구액분해시능촉진형성BaM,재경과열처리후역형성연c축취향、구유륙각형상정립적BaM박막。
M-type barium ferrite thin films were fabricated on Pt/TiO2/SiO2/Si substrate by metal organic decomposition method, focusing on the effect of elhylene diamine tetraacetic acid on the structure, magnetic and microwave properties of BaM ferrite thin films. It is found that, when the mole ratio of EDTA∶(Ba2++Fe3+)=1 hexagonal grains are formed, and the BaM ferrite thin film has excellent magnetic and microwave properties:degree of orientation for c axis of up to 0.91, saturation magnetization Ms of 302kA/m and the ferromagnetic resonance linewith of 22kA/m (277Oe) at 50GHz. These results are due to the fact that appropriate amount of EDTA not only prevents the segregation or intermittent precipitation of metal ions from solution during evaporation but also helps the formation of uniform precursor solution, promoting formation of BaM during the decomposition of the precursor, which results in c-axis orientation of hexagonal BaM ferrite thin film after heat treatment.