CAJ | 학술논문

利用磁控溅射法成功制备了 V 掺杂Cu3 N薄膜.XRD 显示随着 V 掺入浓度的升高,薄膜的择优生长取向由(111)面向(100)面转变.SEM 结果表明向Cu3 N薄膜中掺入 V,薄膜的晶体颗粒形态发生了变化.从对薄膜样品进行的光反射率、电阻率和显微硬度测试结果可以看出,薄膜中掺入适当浓度 V 对其光吸收、导电性和力学性能有一定程度的改善.
이용자공천사법성공제비료 V 참잡Cu3 N박막.XRD 현시수착 V 참입농도적승고,박막적택우생장취향유(111)면향(100)면전변.SEM 결과표명향Cu3 N박막중참입 V,박막적정체과립형태발생료변화.종대박막양품진행적광반사솔、전조솔화현미경도측시결과가이간출,박막중참입괄당농도 V 대기광흡수、도전성화역학성능유일정정도적개선.
V-doped Cu3 N films were prepared successfully by magnetron sputtering under the experiment condi-tion.XRD shows that the Cu3 N film growth prefers direction by changing from (1 1 1)to (100)direction with increasing the content of V.SEM shows that the grains’shape of Cu3 N crystals has been changed by inserting V atoms into the film.Moreover,the optical absorption,electric conduction and mechanical property of the Cu3 N films have been better by doping V to the films.