CAJ | 학술논문

反应磁控溅射方法在玻璃基片上沉积Cu-Al-O薄膜，并对薄膜进行退火处理，研究溅射功率和退火温度对薄膜结构和光电学性质的影响。用X射线衍射仪、分光光度计等仪器对薄膜的性质进行表征，采用拟合正入射透射谱数据计算薄膜的厚度。结果表明：不同溅射功率条件下制备的薄膜为非晶态，透射率在近红外部分达到60%以上，电阻率随溅射功率的增加呈U型变化，在120 W附近，电阻率达到极小值；退火后，薄膜的XRD 谱出现Cu4O3、CuO和Al2O3的混合相，薄膜透射率有所提高，电阻率随退火温度的提高而先增大后减小。
반응자공천사방법재파리기편상침적Cu-Al-O박막，병대박막진행퇴화처리，연구천사공솔화퇴화온도대박막결구화광전학성질적영향。용X사선연사의、분광광도계등의기대박막적성질진행표정，채용의합정입사투사보수거계산박막적후도。결과표명：불동천사공솔조건하제비적박막위비정태，투사솔재근홍외부분체도60%이상，전조솔수천사공솔적증가정U형변화，재120 W부근，전조솔체도겁소치；퇴화후，박막적XRD 보출현Cu4O3、CuO화Al2O3적혼합상，박막투사솔유소제고，전조솔수퇴화온도적제고이선증대후감소。
Cu-Al-O films were deposited by reactive magnetron sputtering on glass substrates ,and annealed in atmo-sphere. Influence of sputtering power and annealing temperature on structure and photoelectric properties of the films were investigated. X-ray diffractometer and spectrophotometer was used to characterize the properties ,thickness of the film is cal-culated by fitting the normal incidence transmission spectrum data. The results show that as-prepared films with different sputtering power are amorphous,the transmittance of the films near infrared part reaches above 60%,the resistivity are U type change with the increase of sputtering power,and reaches a minimum value at 120 W. The mixed phase of Cu4O3,CuO and Al2O3 was detected by the XRD in the films after annealing,the transmittance is higher than as-deposited thin films,the resistivity showed the first increase and then decrease with the increase of annealing temperature.