深圳大学学报(理工版)
深圳大學學報(理工版)
심수대학학보(리공판)
JOURNAL OF SHENZHEN UNIVERSITY (SCIENCE & ENGINEERING)
2015年
1期
82-88
,共7页
高庆庆%张忠健%皮陈炳%蔡雪贤%尚福亮%朱德亮%杨海涛
高慶慶%張忠健%皮陳炳%蔡雪賢%尚福亮%硃德亮%楊海濤
고경경%장충건%피진병%채설현%상복량%주덕량%양해도
材料加工%粉末冶金%氧化锌%氧锌镁%陶瓷靶材%烧结%掺杂比%力学性能
材料加工%粉末冶金%氧化鋅%氧鋅鎂%陶瓷靶材%燒結%摻雜比%力學性能
재료가공%분말야금%양화자%양자미%도자파재%소결%참잡비%역학성능
materials processing%powder metallurgy%ZnO%MgxZn1-x O%ceramic target%sintering%doping ratio%mechanical property
用传统常压固相烧结法,制备掺杂氧化镁的氧化锌陶瓷靶材,研究不同MgO含量及烧结温度对MgxZn1-xO陶瓷靶材的微观结构、力学性能、致密度和导电性能的影响.通过X射线衍射仪(X-ray dif-fraction, XRD)测定靶材相结构,扫描式电子显微镜( scanning electron microscope, SEM)观察靶材的断面形貌,万能实验机测量靶材的抗弯强度,维氏显微硬度仪测量靶材的维氏硬度,阿基米德排水法测量靶材密度,四探针法测量靶材导电性能,对MgxZn1-xO靶材的性能进行了表征,分析了MgxZn1-xO陶瓷靶材的烧结机理.结果表明, MgxZn1-xO靶材的最佳烧结温度随着MgO含量的增加有所提高. MgO的掺杂比为x =0.12时,靶材的最佳烧结温度是1450℃;掺杂比为x =0.20时,靶材的最佳烧结温度约为1500℃.相同烧结温度下,随着MgO掺杂比的增加,靶材的致密性增大;靶材抗弯强度先升后降,掺杂比为x =0.12时达到最大值,为94.56 MPa.靶材硬度随着Mg含量的增加渐增,在1450℃烧结,掺杂比为0时维氏硬度为152.000 N/mm2,掺杂比为x =0.40时维氏硬度为364.045 N/mm2.靶材的导电性随着MgO掺杂比的增加呈渐减趋势,掺杂比为0时,方块电阻为819.36Ω;掺杂比为x =0.40时,方块电阻增至30.00 MΩ.
用傳統常壓固相燒結法,製備摻雜氧化鎂的氧化鋅陶瓷靶材,研究不同MgO含量及燒結溫度對MgxZn1-xO陶瓷靶材的微觀結構、力學性能、緻密度和導電性能的影響.通過X射線衍射儀(X-ray dif-fraction, XRD)測定靶材相結構,掃描式電子顯微鏡( scanning electron microscope, SEM)觀察靶材的斷麵形貌,萬能實驗機測量靶材的抗彎彊度,維氏顯微硬度儀測量靶材的維氏硬度,阿基米德排水法測量靶材密度,四探針法測量靶材導電性能,對MgxZn1-xO靶材的性能進行瞭錶徵,分析瞭MgxZn1-xO陶瓷靶材的燒結機理.結果錶明, MgxZn1-xO靶材的最佳燒結溫度隨著MgO含量的增加有所提高. MgO的摻雜比為x =0.12時,靶材的最佳燒結溫度是1450℃;摻雜比為x =0.20時,靶材的最佳燒結溫度約為1500℃.相同燒結溫度下,隨著MgO摻雜比的增加,靶材的緻密性增大;靶材抗彎彊度先升後降,摻雜比為x =0.12時達到最大值,為94.56 MPa.靶材硬度隨著Mg含量的增加漸增,在1450℃燒結,摻雜比為0時維氏硬度為152.000 N/mm2,摻雜比為x =0.40時維氏硬度為364.045 N/mm2.靶材的導電性隨著MgO摻雜比的增加呈漸減趨勢,摻雜比為0時,方塊電阻為819.36Ω;摻雜比為x =0.40時,方塊電阻增至30.00 MΩ.
용전통상압고상소결법,제비참잡양화미적양화자도자파재,연구불동MgO함량급소결온도대MgxZn1-xO도자파재적미관결구、역학성능、치밀도화도전성능적영향.통과X사선연사의(X-ray dif-fraction, XRD)측정파재상결구,소묘식전자현미경( scanning electron microscope, SEM)관찰파재적단면형모,만능실험궤측량파재적항만강도,유씨현미경도의측량파재적유씨경도,아기미덕배수법측량파재밀도,사탐침법측량파재도전성능,대MgxZn1-xO파재적성능진행료표정,분석료MgxZn1-xO도자파재적소결궤리.결과표명, MgxZn1-xO파재적최가소결온도수착MgO함량적증가유소제고. MgO적참잡비위x =0.12시,파재적최가소결온도시1450℃;참잡비위x =0.20시,파재적최가소결온도약위1500℃.상동소결온도하,수착MgO참잡비적증가,파재적치밀성증대;파재항만강도선승후강,참잡비위x =0.12시체도최대치,위94.56 MPa.파재경도수착Mg함량적증가점증,재1450℃소결,참잡비위0시유씨경도위152.000 N/mm2,참잡비위x =0.40시유씨경도위364.045 N/mm2.파재적도전성수착MgO참잡비적증가정점감추세,참잡비위0시,방괴전조위819.36Ω;참잡비위x =0.40시,방괴전조증지30.00 MΩ.
MgxZn1-xO ceramic targets were prepared by using traditional solid-phase sintering method, and the effects of different MgO doping ratios and sintering temperatures on their microstructure, mechanical properties, density and electrical properties were studied. The MgxZn1-xO targets performance were characterized through specific analyses, including phase structure analysis by X-ray diffraction ( XRD) , fracture surface observation by scanning electron mi-croscope (SEM), bending strength measurement by universal-testing machine, Vickers hardness measurement by micro Vickers tester, density measurement by Archimedes principle, and conductivity measurement by the four-probe method. Also, a preliminary understanding of the sintering mechanism of MgxZn1-xO targets was better understood on the basis of the characterization. The results show that the best sintering temperature increases with the increase of the MgO content x in MgxZn1-xO. The optimal sintering temperature is 1 450 ℃, at the doping ratio x = 0. 12, and the optimal sintering temperature is 1 500 ℃, at the doping ratio x = 0. 20. At the same sintering temperature, the density increases with the increase of MgO content, while the bending strength first increases and then decreases with the maximum bending strength being 94. 56 MPa at the doping ratio x = 0. 12 . The hardness always increases with the increase of MgO content:Vickers hardness reaches 152. 000 N/mm2 without doping, and the hardness increases to 364. 045 N/mm2 at the doping ratio x =0. 40. The sheet conductivity gradually decreases with the increase of MgO doping ratio. The sheet resistance is 819. 36 Ω when doping ratio is 0 and it increases to 30. 00 MΩ when doping ratio x = 0. 40 .