CAJ | 학술논문

采用传统射频磁控溅射技术,通过引入SiO2缓冲层以及调节工作气压的方法,在Si衬底上制备具有高度(1120)择优取向的ZnO薄膜。采用X射线衍射技术和原子力显微镜分析ZnO薄膜的晶体特性和择优取向。研究发现,引入SiO2缓冲层能显著减小ZnO/SiO2/Si 三层结构声表面波器件的温度延迟系数(temperature coefficient of delay, TCD),当SiO2缓冲层厚度为200 nm时, ZnO薄膜同时具有(0002)和(1120)择优取向,且TCD 值仅为2×10-6℃-1左右,说明器件温度稳定性佳。当工作气压降低时, ZnO (1120)择优取向增强,相应的声表面波器件的机电耦合系数(K2)也增大。在大机电耦合系数和高温度稳定性的ZnO/SiO2/Si三层结构的基础上,有望制作出高性能的Love波声表面波生物传感器。
채용전통사빈자공천사기술,통과인입SiO2완충층이급조절공작기압적방법,재Si츤저상제비구유고도(1120)택우취향적ZnO박막。채용X사선연사기술화원자력현미경분석ZnO박막적정체특성화택우취향。연구발현,인입SiO2완충층능현저감소ZnO/SiO2/Si 삼층결구성표면파기건적온도연지계수(temperature coefficient of delay, TCD),당SiO2완충층후도위200 nm시, ZnO박막동시구유(0002)화(1120)택우취향,차TCD 치부위2×10-6℃-1좌우,설명기건온도은정성가。당공작기압강저시, ZnO (1120)택우취향증강,상응적성표면파기건적궤전우합계수(K2)야증대。재대궤전우합계수화고온도은정성적ZnO/SiO2/Si삼층결구적기출상,유망제작출고성능적Love파성표면파생물전감기。
Using a conventional radio frequency( RF) magnetron sputtering system, we have succeeded in fabricating ZnO films with high (1120) preferred orientation on Si substrate by introducing a SiO2 buffer layer and adjusting the sputtering gas pressure. The crystallographic characteristics and the preferred orientation of ZnO films were characterized by X-ray diffraction ( XRD) and atomic force microscopic ( AFM) analysis. The temperature coefficient of delay ( TCD) of the ZnO/SiO2/Si SAW device decreases significantly when a SiO2 buffer layer is introduced. When the thickness of SiO2 buffer layer is 200 nm, ZnO film shows ( 0002 ) and ( 1120 ) preferred orientations simultaneously, and the TCD of ZnO/SiO2/Si SAW device is nearly 2 × 10 -6℃ -1 , indicating that the device main-tains good temperature stability. When the sputtering gas pressure decreases, the ( 1120 ) preferred orientation is enhanced, and the corresponding electromechanical coupling coefficient ( K2 ) of the SAW devices enlarges. The tri-layer structure of ZnO/SiO2/Si with large K2 and high temperature stability is promising for fabricating high performance Love mode SAW biosensors.