催化学报
催化學報
최화학보
CHINESE JOURNAL OF CATALYSIS
2015年
2期
181-187
,共7页
二氧化钛%芯位移%X射线光电子能谱%阴离子%替换掺杂%间隙掺杂%密度泛函理论%热力学性质
二氧化鈦%芯位移%X射線光電子能譜%陰離子%替換摻雜%間隙摻雜%密度汎函理論%熱力學性質
이양화태%심위이%X사선광전자능보%음리자%체환참잡%간극참잡%밀도범함이론%열역학성질
Titania%Core level shifts%X-ray photoelectron spectroscopy%Anion%Subtitutional doping%Interstitial doping%Density function theory%Thermodynamics
采用第一性原理计算考察了阴离子(硼、碳、氮、氟、磷、硫)掺杂的二氧化钛(包括锐钛矿相和金红石相)。芯位移计算结果表明,在氮掺杂的TiO2中,间隙掺杂类型的N的1s能级在XPS能谱上峰的位置要比替代掺杂的能级高,类似的结果也在硼、碳、磷和硫掺杂的TiO2上发现。然而对于F掺杂的TiO2,替代掺杂的峰位置比间隙掺杂的高,且与TiO2的晶相无关。还对阴离子掺杂的TiO2进行了热力学研究。结果表明,替换掺杂的形成焓高于间隙掺杂的,因此替代掺杂的TiO2的制备需要苛刻的条件,而间隙掺杂TiO2的制备只需温和的湿化学条件。
採用第一性原理計算攷察瞭陰離子(硼、碳、氮、氟、燐、硫)摻雜的二氧化鈦(包括銳鈦礦相和金紅石相)。芯位移計算結果錶明,在氮摻雜的TiO2中,間隙摻雜類型的N的1s能級在XPS能譜上峰的位置要比替代摻雜的能級高,類似的結果也在硼、碳、燐和硫摻雜的TiO2上髮現。然而對于F摻雜的TiO2,替代摻雜的峰位置比間隙摻雜的高,且與TiO2的晶相無關。還對陰離子摻雜的TiO2進行瞭熱力學研究。結果錶明,替換摻雜的形成焓高于間隙摻雜的,因此替代摻雜的TiO2的製備需要苛刻的條件,而間隙摻雜TiO2的製備隻需溫和的濕化學條件。
채용제일성원리계산고찰료음리자(붕、탄、담、불、린、류)참잡적이양화태(포괄예태광상화금홍석상)。심위이계산결과표명,재담참잡적TiO2중,간극참잡류형적N적1s능급재XPS능보상봉적위치요비체대참잡적능급고,유사적결과야재붕、탄、린화류참잡적TiO2상발현。연이대우F참잡적TiO2,체대참잡적봉위치비간극참잡적고,차여TiO2적정상무관。환대음리자참잡적TiO2진행료열역학연구。결과표명,체환참잡적형성함고우간극참잡적,인차체대참잡적TiO2적제비수요가각적조건,이간극참잡TiO2적제비지수온화적습화학조건。
We present a comprehensive and improved density functional theory (DFT) calculation of ani‐on‐doped (anion=B, C, N, F, P, S) anatase and rutile TiO2. The first part is a first principles calcula‐tion of the core level shifts (CLS) for various anion dopants in both anatase and rutile TiO2. The CLS results revealed that interstitial N had a higher N 1s binding energy than substitutional N, which agreed well with experimental results. The calculation also showed that for B‐, C‐, S‐, and P‐doped TiO2, the interstitial dopant had an energy that is higher than that of a substitutional dopant, which is similar to N‐doped TiO2. However, for F‐doped TiO2, the energy of the substitutional dopant is higher, and this is irrespective of the TiO2 crystallography. We also calculated the enthalpy of doping and found that the substitutional dopant had a higher enthalpy than the interstitial dopant. The results revealed that substitutional doping required severe experimental conditions, whereas inter‐stitial doping only requires modest wet chemistry conditions.