CAJ | 학술논문

粗铝丝键合是功率VDMOS器件封装的关键工序，键合质量的好坏直接影响到器件的封装成品率以及后续的筛选成品率。针对直径为380μm的粗铝丝进行功率VDMOS器件的键合工艺研究。结果显示，在选取130°的键合角度时，焊盘宽度应适当增加且应至少增加150μm，才能保证键合质量；随着第二点键合角度的增加，键合点尾丝端划伤芯片的情况变好；同时考虑键合点尾端和键合点颈部都完全在焊盘内，且采用默认的第二点键合角度，则所需焊盘宽度至少应为1800μm。
조려사건합시공솔VDMOS기건봉장적관건공서，건합질량적호배직접영향도기건적봉장성품솔이급후속적사선성품솔。침대직경위380μm적조려사진행공솔VDMOS기건적건합공예연구。결과현시，재선취130°적건합각도시，한반관도응괄당증가차응지소증가150μm，재능보증건합질량；수착제이점건합각도적증가，건합점미사단화상심편적정황변호；동시고필건합점미단화건합점경부도완전재한반내，차채용묵인적제이점건합각도，칙소수한반관도지소응위1800μm。
The heavy Aluminum wire bonding is the key process in the flow of the power VDMOS devices packaging. It is very important to have a bonding quality which will affect the finished product yield and the screening yield. The process of wire bonding with 380 μm heavy Aluminum was studied on power VDMOS devices. Results show that the pad width should be larger to 150 μm in order to improve the bonding quality when the second bonding angle was 130°. Moreover, the bonding damage was less with the second bonding angle decreasing. The pad minimum width is 1 800 μm for the non-damaged bonding point with the default second bonding angle.