CAJ | 학술논문

原子层沉积( ALD)是一种新型的精确表层薄膜制备技术，具有沉积面积大、薄膜均匀、膜厚纳米级可控生长、低温性等特点，适用于纳米多孔和高深宽比基底材料，可应用于三维微纳结构器件的功能薄膜材料制备，广受国内外学术界和工业界的关注。综述了ALD技术发展历史和技术原理，介绍了ALD技术在微纳器件中的应用进展，涉及半导体微纳集成电路、微纳光学器件、微纳米生物医药等高新技术领域，对ALD技术当前存在的问题进行了分析，并展望了未来发展方向。
원자층침적( ALD)시일충신형적정학표층박막제비기술，구유침적면적대、박막균균、막후납미급가공생장、저온성등특점，괄용우납미다공화고심관비기저재료，가응용우삼유미납결구기건적공능박막재료제비，엄수국내외학술계화공업계적관주。종술료ALD기술발전역사화기술원리，개소료ALD기술재미납기건중적응용진전，섭급반도체미납집성전로、미납광학기건、미납미생물의약등고신기술영역，대ALD기술당전존재적문제진행료분석，병전망료미래발전방향。
ABSTRACT:Atomic layer deposition ( ALD) is a new type of accurate surface thin film preparation technique, which has several characteristics such as depositing large-area uniform films, making the film thickness control at nanometer level feasible, and lower deposition temperature. This new technique is suitable for the complicated nano-porous and high aspect ratio substrate materials, and can be applied in the preparation of functional film materials for 3D micro-nano devices. Now great attention of widespread aca-demic and industry has been paid to ALD technology. The development history and related working principles of ALD technology were reviewed in this paper. Especially, the application progress of ALD technique in the micro-nano devices, including semicon-ductor integrated circuit, micro and nano optics and biomedical field, was introduced in the paper. Meanwhile, the existing prob-lems of ALD technique and its future development tendency were discussed.