CAJ | 학술논문

报道了基于Ge衬底分子束外延碲镉汞原位As掺杂材料的研究结果，进行了As掺杂碲镉汞薄膜生长的温度控制研究；分析了As束流对材料晶体质量的影响，结合SIMS测试技术得到了As杂质掺杂浓度与束源炉加热温度的关系；并利用傅里叶红外光谱仪、X射线双晶衍射、EPD检测等手段对晶体质量进行了分析表征，结果显示利用 MBE 方法可以生长出晶体质量良好、缺陷密度低的碲镉汞薄膜；进一步研究了As杂质的激活退火工艺及不同退火条件对材料电学参数的影响。
보도료기우Ge츤저분자속외연제력홍원위As참잡재료적연구결과，진행료As참잡제력홍박막생장적온도공제연구；분석료As속류대재료정체질량적영향，결합SIMS측시기술득도료As잡질참잡농도여속원로가열온도적관계；병이용부리협홍외광보의、X사선쌍정연사、EPD검측등수단대정체질량진행료분석표정，결과현시이용 MBE 방법가이생장출정체질량량호、결함밀도저적제력홍박막；진일보연구료As잡질적격활퇴화공예급불동퇴화조건대재료전학삼수적영향。
This paper reports the result of in-situ As-doped HgCdTe thin film growth on Ge-base by MBE. It mainly reseaches on controlling the temperature of As-doped HgCdTe thin film, and analyzes the relationship between the crystal quality and the As-flux. It has been achieved the relationship between the temperatures of effusion cells and impurity concentration which was analyzed by SIMS; FTIR, X-ray and EPD are used to character the quality of the crystal, and the result shows that the HgCdTe thin film with good crystal quality and low defect density could be grown by MBE; More efforts were carried on the existing annealing of As-impurity, as well as the electronic parameters with different annealing temperatures.