红外技术
紅外技術
홍외기술
INFRARED TECHNOLOGY
2015年
2期
101-104
,共4页
阙隆成%吕坚%魏林海%周云%蒋亚东
闕隆成%呂堅%魏林海%週雲%蔣亞東
궐륭성%려견%위림해%주운%장아동
微测辐射热计%读出电路%衬底温度补偿%非均匀性补偿
微測輻射熱計%讀齣電路%襯底溫度補償%非均勻性補償
미측복사열계%독출전로%츤저온도보상%비균균성보상
micro-bolometer%ROIC%substrate temperature compensation%non-uniformity compensation
针对非制冷红外探测器系统,提出了一种恒流偏置的红外读出电路(ROIC),该电路具有衬底温度补偿功能,且可实现片上偏移非均匀性补偿。基于微测辐射热计等效电阻受目标温度、衬底温度等影响的等效模型,每个读出通道采用两个盲电阻以消除衬底温度的影响,同时使用DAC逐点调节参考电压,以完成片上偏移非均匀性补偿。该ROIC 应用到阵列大小为320×240的非制冷微测辐射热计焦平面上,已在CSMC 05MIXDDST02的0.5?m CMOS标准工艺下成功流试验片。电路测试结果表明:对于常温目标,当衬底温度变化60 K时,输出电压变化小于500 mV;经偏移非均匀性补偿后,阵列的固定图像噪声为11.8 mV。该ROIC适用于应用于复杂温度环境的高均匀性非制冷红外探测器。
針對非製冷紅外探測器繫統,提齣瞭一種恆流偏置的紅外讀齣電路(ROIC),該電路具有襯底溫度補償功能,且可實現片上偏移非均勻性補償。基于微測輻射熱計等效電阻受目標溫度、襯底溫度等影響的等效模型,每箇讀齣通道採用兩箇盲電阻以消除襯底溫度的影響,同時使用DAC逐點調節參攷電壓,以完成片上偏移非均勻性補償。該ROIC 應用到陣列大小為320×240的非製冷微測輻射熱計焦平麵上,已在CSMC 05MIXDDST02的0.5?m CMOS標準工藝下成功流試驗片。電路測試結果錶明:對于常溫目標,噹襯底溫度變化60 K時,輸齣電壓變化小于500 mV;經偏移非均勻性補償後,陣列的固定圖像譟聲為11.8 mV。該ROIC適用于應用于複雜溫度環境的高均勻性非製冷紅外探測器。
침대비제랭홍외탐측기계통,제출료일충항류편치적홍외독출전로(ROIC),해전로구유츤저온도보상공능,차가실현편상편이비균균성보상。기우미측복사열계등효전조수목표온도、츤저온도등영향적등효모형,매개독출통도채용량개맹전조이소제츤저온도적영향,동시사용DAC축점조절삼고전압,이완성편상편이비균균성보상。해ROIC 응용도진렬대소위320×240적비제랭미측복사열계초평면상,이재CSMC 05MIXDDST02적0.5?m CMOS표준공예하성공류시험편。전로측시결과표명:대우상온목표,당츤저온도변화60 K시,수출전압변화소우500 mV;경편이비균균성보상후,진렬적고정도상조성위11.8 mV。해ROIC괄용우응용우복잡온도배경적고균균성비제랭홍외탐측기。
This paper describes a constant current-biased readout circuit with substrate temperature compensation and non-uniformity compensation for the uncooled micro-bolometer detector. The influence of temperature for the equivalent resistance of micro-bolometer is evaluated. Then an effective way for substrate temperature compensation is proposed, which utilizes two blind micro-bolometers in each readout circuit channel. On the other hand, the non-uniformity compensation is also achieved by a 5bits on-chip DAC. A 320×240 uncooled micro-bolometer focal plane array(FPA)based on the proposed circuit was implemented on silicon by 0.5?m CMOS technology. The measurement data show that the maximum difference of a normal temperature object over 60K substrate of which temperature change is only 500mV and the fixed pattern noise(FPN)is less than 11.8mV. Thus it is ideally suited for high performance production applications.