CAJ | 학술논문

重点研究了InGaAs/InP SPAD的隧道贯穿电场、雪崩击穿电场、雪崩宽度与过偏电压的关系，提出了过偏电压的计算方法。分析了InGaAs/InP SPAD的基本特性即探测效率、暗计数率与其过偏电压、工作温度、量子效率、电场分布的依赖关系，提出了一种单光子InGaAs雪崩二极管的设计方法。设计制作了InGaAs/InP SPAD，并在门控淬灭模式下进行了单光子探测实验。结果表明：对于φ200μm的SPAD，在过偏2 V、温度-40℃条件下，探测效率(PDE)﹥20%(1550 nm)、暗计数率(DCR)φ20 kHz；对于φ50μm的SPAD，在过偏2.5 V、温度-40℃条件下，探测效率(PDE)﹥23%(1550 nm)、暗计数率(DCR)2 kHz。最后对实验结果进行了分析和讨论。
중점연구료InGaAs/InP SPAD적수도관천전장、설붕격천전장、설붕관도여과편전압적관계，제출료과편전압적계산방법。분석료InGaAs/InP SPAD적기본특성즉탐측효솔、암계수솔여기과편전압、공작온도、양자효솔、전장분포적의뢰관계，제출료일충단광자InGaAs설붕이겁관적설계방법。설계제작료InGaAs/InP SPAD，병재문공쉬멸모식하진행료단광자탐측실험。결과표명：대우φ200μm적SPAD，재과편2 V、온도-40℃조건하，탐측효솔(PDE)﹥20%(1550 nm)、암계수솔(DCR)φ20 kHz；대우φ50μm적SPAD，재과편2.5 V、온도-40℃조건하，탐측효솔(PDE)﹥23%(1550 nm)、암계수솔(DCR)2 kHz。최후대실험결과진행료분석화토론。
The tunneling breakdown electric field, avalanche breakdown electric field, multiplication region width depend on exceed breakdown voltage of InGaAs/InP SPAD was researched as a key point. The calculated method of exceed breakdown voltage was presented. The basic performance of single photon avalanche diode (SPAD) depends on their excess bias, multiplication region width, working temperature, electric-field distribution and quantum efficiency has been analyzed. According to these analysis, a designed solution of InGaAs/InP SPAD has been presented, and then the device was manufactured later. Under the conditions of -40 ℃ and exceed breakdown voltage over 2 V, the InGaAs/InP SPAD of φ200 μm diameter exhibits dark count rates (DCR) below 20 kHz and photon detection efficiency (PDE) of 20%(1 500 nm). Under the conditions of-40℃and exceed breakdown voltage over 2.5 V, the InGaAs/InP SPAD of φ50μm diameter exhibits dark count rates (DCR)below 2 kHz and photon detection efficiency (PDE) of 23%(1550 nm). Finally, the experimental results were analyzed.