CAJ | 학술논문

通过电化学腐蚀的方法制备发橙色荧光的多孔硅，采用荧光光谱和透射电镜对制备的多孔硅进行表征．结果表明，其在空气中放置时，荧光会逐渐降低，直至完全消失．进一步对其透射电镜图片进行分析认为，令其发光的根本原因是多孔硅内部存在着单晶的硅晶粒．通过热反应和光反应两种方法在多孔硅表面引入Hg2＋识别基团，得到多孔硅化学传感器S1和S2．二者均可实现对Hg2＋的选择性识别．
통과전화학부식적방법제비발등색형광적다공규，채용형광광보화투사전경대제비적다공규진행표정．결과표명，기재공기중방치시，형광회축점강저，직지완전소실．진일보대기투사전경도편진행분석인위，령기발광적근본원인시다공규내부존재착단정적규정립．통과열반응화광반응량충방법재다공규표면인입Hg2＋식별기단，득도다공규화학전감기S1화S2．이자균가실현대Hg2＋적선택성식별．
Porous silicon with orange fluorescence was prepared by chemical etching method.The porous silicon particles were characterized by fluorescence spectrum and transmission electron microscopy ( TEM ) .The results showed that the fluorescence intensity was gradually decreased until vanishing after exposed in air for more than one week.The fluorescence luminescence was attributed to the existing of single crystal silicon in the porous silicon.The Hg2+recognition groups were introduced to the surface of porous silicon through thermal reaction and photoreaction forming two chemosensors S1 and S2.Mercury ion could be recognized selectively.