CAJ | 학술논문

氧化硅（SiOx）原位钝化层对氧化钒（VOx）薄膜电学特性的影响分析旨在改善像元微桥结构的光学吸收特性，提高热敏VOx薄膜层的方阻和电阻温度系数（TCR）稳定性。采用离子束溅射沉积50nm VOx薄膜后，紧接着沉积30nm SiOx钝化层。通过原位残余气体分析仪（RGA）和衬底温度控制，调节氧化钒薄膜中的氧含量，分析了VOx单层膜、SiOx/VOx双层膜的电学特性随工艺温度的变化规律，原位残余气体分析仪（RGA）和150℃加温工艺提高了VOx热敏层薄膜的方阻和电阻温度系数稳定性。
양화규（SiOx）원위둔화층대양화범（VOx）박막전학특성적영향분석지재개선상원미교결구적광학흡수특성，제고열민VOx박막층적방조화전조온도계수（TCR）은정성。채용리자속천사침적50nm VOx박막후，긴접착침적30nm SiOx둔화층。통과원위잔여기체분석의（RGA）화츤저온도공제，조절양화범박막중적양함량，분석료VOx단층막、SiOx/VOx쌍층막적전학특성수공예온도적변화규률，원위잔여기체분석의（RGA）화150℃가온공예제고료VOx열민층박막적방조화전조온도계수은정성。
The photoelectrical properties of VOx film by as-deposited SiOx dielectric layer is proposed to enhance infrared ray absorption coefficient of pixel microbridge, and improves quare resistance and TCR stability of VOx active film. In this paper, we prepare a series of 50nm VOx films by ion beam sputter deposition and then 30nm SiOx film sare deposited. We bring in RGA and temperature condition as technical parameters to adjust Oxygenic content of VOx films, and test electrical properties of VOx film and SiOx/VOx film stack, which improves square resistance and TCR stability of VOx active film.