CAJ | 학술논문

利用KrF准分子激光器晶化非晶硅薄膜,研究了不同的激光能量密度和脉冲次数对非晶硅薄膜晶化效果的影响。利用X射线衍射(XRD)和扫描电子显微镜(SEM)对晶化前后的样品的物相结构和表面形貌进行了表征和分析。实验结果表明,在激光频率为1 Hz的条件下,能量密度约为180 mJ/cm2时,准分子激光退火处理实现了薄膜由非晶结构向多晶结构的转变；当大于晶化阈值180 mJ/cm2小于能量密度230 mJ/cm2时,随着激光能量密度增大,薄膜晶化效果越来越好；激光能量密度为230 mJ/cm2时,晶化效果最好、晶粒尺寸最大,约60 nm,并且此时薄膜沿Si(111)面择优生长；脉冲次数50次以后对晶化的影响不大。
이용KrF준분자격광기정화비정규박막,연구료불동적격광능량밀도화맥충차수대비정규박막정화효과적영향。이용X사선연사(XRD)화소묘전자현미경(SEM)대정화전후적양품적물상결구화표면형모진행료표정화분석。실험결과표명,재격광빈솔위1 Hz적조건하,능량밀도약위180 mJ/cm2시,준분자격광퇴화처리실현료박막유비정결구향다정결구적전변；당대우정화역치180 mJ/cm2소우능량밀도230 mJ/cm2시,수착격광능량밀도증대,박막정화효과월래월호；격광능량밀도위230 mJ/cm2시,정화효과최호、정립척촌최대,약60 nm,병차차시박막연Si(111)면택우생장；맥충차수50차이후대정화적영향불대。
Amorphous silicon ( a:Si ) films were annealed by KrF excimer laser to realize the influence of different power density and different pulse counts. The analysis of a:Si thin film microstructure and surface morphology was conducted using X- ray diffractometer ( XRD ) and scanning electron microscope (SEM). In the range of 1 Hz, the results show that the polycrystalline silicon structure has been achieved from amorphous silicon by excimer laser annealing when the energy density reaches about 180 mJ/cm2. When the energy density is from the energy density threshold 180 mJ/cm2 to the energy density 230 mJ/cm2, the crystallization effect gets better with the increase of the energy density. The effect of crystallization is best and the gain size is the biggest while the energy density is 230 mJ/cm2. The maximum average size of the grain reaches 60 nm and the polycrystalline silicon film grows preferentially along the crystallographic(111) orientation. The influence of pulse counts are not remarkable if the pulse counts are over 50 times.