CAJ | 학술논문

采用电路仿真的方法对铁电存储单元中不同电路节点的单粒子效应敏感性进行了研究，分析了铁电存储单元发生单粒子翻转的机理。仿真结果表明，铁电存储单元的单粒子翻转效应与铁电电容的极化状态有关。当单粒子入射阵列中截止态NM OS管时，只会造成存“0”铁电电容的极化翻转；板线上的单粒子瞬态脉冲对存储数据无影响。根据2T2C和1T1C型铁电存储单元的读出方式，分别分析了可能发生的数据翻转类型。提出了铁电存储单元抗单粒子翻转的加固措施。
채용전로방진적방법대철전존저단원중불동전로절점적단입자효응민감성진행료연구，분석료철전존저단원발생단입자번전적궤리。방진결과표명，철전존저단원적단입자번전효응여철전전용적겁화상태유관。당단입자입사진렬중절지태NM OS관시，지회조성존“0”철전전용적겁화번전；판선상적단입자순태맥충대존저수거무영향。근거2T2C화1T1C형철전존저단원적독출방식，분별분석료가능발생적수거번전류형。제출료철전존저단원항단입자번전적가고조시。
The single event effect sensitivity of different circuit nodes in the ferroelectric memory cell is studied by circuit simulation ,and the single event upset mechanism of the ferroelectric memory cell is analyzed .The simulation results show that the upset of the ferroelectric memory cell depends on the polarization state of the ferroelectric capacitor .When a high energy particle strikes the off‐state NMOS in the memory array ,the polarization reversal only happens to the corresponding ferroelectric capacitor which stored data “0” .Based on the readout methods of the 2T2C and 1T1C ferroelectric memory cell ,the upset types of the output data are analyzed .Some methods to harden the FRAM cell against SEU are also proposed .