CAJ | 학술논문

研究了一种硅基十字型金属亚波长孔阵列在太赫兹波段的传输性质和电调谐性质．十字形半波长金属孔阵列加工在n型掺杂硅上形成肖特基结，其耗尽区的电导率可通过调整外加反向偏压实时控制，从而实现对增强谐振的太赫兹波传输的控制．由此提出了一种半导体材料电学特性与太赫兹器件电磁场特性结合的联合仿真方法：首先基于漂移扩散方程模拟半导体材料在不同偏置电压下载流子的稳态分布并计算出其对应的材料电导率，进而利用时域有限差分法仿真器件在太赫兹波段的传输性质．设计的原理型调制器在外加偏压分别为在0 V和16 V时在4．87 T Hz谐振频率处实现了76％的调制深度．并且硅介质材料和相对简单的器件结构使器件实现成本和难度大大降低．这种设计方法和器件结构也可被应用于其他太赫兹或光学频段，尤其在光学频段将具有更好的性能．
연구료일충규기십자형금속아파장공진렬재태혁자파단적전수성질화전조해성질．십자형반파장금속공진렬가공재n형참잡규상형성초특기결，기모진구적전도솔가통과조정외가반향편압실시공제，종이실현대증강해진적태혁자파전수적공제．유차제출료일충반도체재료전학특성여태혁자기건전자장특성결합적연합방진방법：수선기우표이확산방정모의반도체재료재불동편치전압하재류자적은태분포병계산출기대응적재료전도솔，진이이용시역유한차분법방진기건재태혁자파단적전수성질．설계적원리형조제기재외가편압분별위재0 V화16 V시재4．87 T Hz해진빈솔처실현료76％적조제심도．병차규개질재료화상대간단적기건결구사기건실현성본화난도대대강저．저충설계방법화기건결구야가피응용우기타태혁자혹광학빈단，우기재광학빈단장구유경호적성능．
The transmission and tuning properties of an electrically‐controlled terahertz modulator based on cross‐shaped subwavelength hole array is investigated .The metal‐semiconductor forms a Schottky junction ,where the depletion region modifies the substrate conductivity through an external reverse voltage bias .This achieves effective control of the resonance enhanced terahertz transmission . We introduce a simulation method which combines electrical specification of the substrate and electromagnetic mechanism of the device .Our proof‐of‐concept modulator achieves an intensity modulation depth of 76% by changing the external voltage bias from 0 to 16 volts .In addition , the silicon substrate and relative simple device structure achieve reduced fabrication cost and difficulty .This design approach and device structure can be also translated to other terahertz and optical frequency range ,especially in the optical frequencies ,where the switching performance could be more promising .