材料科学与工艺
材料科學與工藝
재료과학여공예
MATERIAL SCIENCE AND TECHNOLOGY
2015年
2期
53-57
,共5页
杨淑敏%李海涛%韩伟%岂云开%顾建军
楊淑敏%李海濤%韓偉%豈雲開%顧建軍
양숙민%리해도%한위%기운개%고건군
多铁材料%溶胶-凝胶%磁控溅射%铁电特性%磁特性
多鐵材料%溶膠-凝膠%磁控濺射%鐵電特性%磁特性
다철재료%용효-응효%자공천사%철전특성%자특성
multiferroic materials%Sol-gel%magnetron sputtering%ferroelectric properties%magnetic properties
为改善铁酸铋( BiFeO3)薄膜的铁电性能,通过溶胶-凝胶和磁控溅射的方法在 Au/Pt/Cr/Si 基底上制备了TiO2/BiFeO3( TiO2/BFO)和BiFeO3薄膜。采用扫描探针显微镜、扫描电子显微镜、X射线衍射仪、铁电测试仪和物理性能测量仪对薄膜进行了物性表征。实验结果表明:TiO2阻挡层抑制了BFO薄膜表面缺陷的形成,提高了复合薄膜的绝缘性能,使TiO2/BFO薄膜中泄漏电流明显降低,且导电机制由欧姆型向空间电荷限制传导型转变。此外,溅射TiO2阻挡层破坏了BFO表面的螺旋结构,使TiO2和BFO之间晶格失配而产生界面应力,提高了薄膜的磁电性能。在顶电极和铁电层之间引入阻挡层是提高BFO薄膜磁电性能的一种有效方法。
為改善鐵痠鉍( BiFeO3)薄膜的鐵電性能,通過溶膠-凝膠和磁控濺射的方法在 Au/Pt/Cr/Si 基底上製備瞭TiO2/BiFeO3( TiO2/BFO)和BiFeO3薄膜。採用掃描探針顯微鏡、掃描電子顯微鏡、X射線衍射儀、鐵電測試儀和物理性能測量儀對薄膜進行瞭物性錶徵。實驗結果錶明:TiO2阻擋層抑製瞭BFO薄膜錶麵缺陷的形成,提高瞭複閤薄膜的絕緣性能,使TiO2/BFO薄膜中洩漏電流明顯降低,且導電機製由歐姆型嚮空間電荷限製傳導型轉變。此外,濺射TiO2阻擋層破壞瞭BFO錶麵的螺鏇結構,使TiO2和BFO之間晶格失配而產生界麵應力,提高瞭薄膜的磁電性能。在頂電極和鐵電層之間引入阻擋層是提高BFO薄膜磁電性能的一種有效方法。
위개선철산필( BiFeO3)박막적철전성능,통과용효-응효화자공천사적방법재 Au/Pt/Cr/Si 기저상제비료TiO2/BiFeO3( TiO2/BFO)화BiFeO3박막。채용소묘탐침현미경、소묘전자현미경、X사선연사의、철전측시의화물이성능측량의대박막진행료물성표정。실험결과표명:TiO2조당층억제료BFO박막표면결함적형성,제고료복합박막적절연성능,사TiO2/BFO박막중설루전류명현강저,차도전궤제유구모형향공간전하한제전도형전변。차외,천사TiO2조당층파배료BFO표면적라선결구,사TiO2화BFO지간정격실배이산생계면응력,제고료박막적자전성능。재정전겁화철전층지간인입조당층시제고BFO박막자전성능적일충유효방법。
In order to improve the ferroelectric property of BiFeO3( BFO) film, TiO2/BiFeO3 composite films and BiFeO3 ( BFO ) films on Au/Pt/Cr/Si substrates were prepared by a sol?gel process and magnetron sputtering. The films were characterized by using scanning probe microscope ( SPM ) , scanning electron microscope ( SEM ) , X?ray diffraction ( XRD ) , ferroelectric instrument and physical properties of the measuring instrument ( PPMS) . The results show that TiO2 layers suppress the formation of surface defect , improve the insulation of the BFO films, and thus significantly reduced lower leakage current density. The main conduction mechanism shows a transformation from ohmic conduction to space charge limited conduction as increasing electric field. Moreover, sputtering TiO2 layer on the surface of BFO films destroyed the spiral structure of BFO films. The interface stress between TiO2 and BFO induced by lattice mismatch improves magnetoelectric properties. The barrier layer between the ferroelectric film and the top electrode is an effective approach to improve the performance of ferroelectric materials.