电镀与涂饰
電鍍與塗飾
전도여도식
ELECTROPLATING & FINISHING
2015年
5期
269-271
,共3页
钛%高温合金%碳化钨%钴%等离子喷涂层%去除
鈦%高溫閤金%碳化鎢%鈷%等離子噴塗層%去除
태%고온합금%탄화오%고%등리자분도층%거제
titanium%superalloy%tungsten carbide%cobalt%plasma sprayed coating%removal
采用化学法分别去除GH4169合金及TC4合金基材表面的WC–Co等离子喷涂层。通过正交试验对去除液配方和处理温度进行优化。GH4169基WC–Co涂层的最优去除工艺条件为：HNO330 mL/L，H2O2550 mL/L，处理温度35°C。TC4合金基WC–Co涂层的最优去除工艺条件为：HNO370 mL/L，H2O2550 mL/L，处理温度30°C。采用上述工艺可有效去除GH4169和TC4表面的WC–Co涂层，对基体无明显的化学腐蚀，不会导致基体吸氢。1 L去除液可处理约10 dm20.3 mm厚的WC–Co涂层。
採用化學法分彆去除GH4169閤金及TC4閤金基材錶麵的WC–Co等離子噴塗層。通過正交試驗對去除液配方和處理溫度進行優化。GH4169基WC–Co塗層的最優去除工藝條件為：HNO330 mL/L，H2O2550 mL/L，處理溫度35°C。TC4閤金基WC–Co塗層的最優去除工藝條件為：HNO370 mL/L，H2O2550 mL/L，處理溫度30°C。採用上述工藝可有效去除GH4169和TC4錶麵的WC–Co塗層，對基體無明顯的化學腐蝕，不會導緻基體吸氫。1 L去除液可處理約10 dm20.3 mm厚的WC–Co塗層。
채용화학법분별거제GH4169합금급TC4합금기재표면적WC–Co등리자분도층。통과정교시험대거제액배방화처리온도진행우화。GH4169기WC–Co도층적최우거제공예조건위：HNO330 mL/L，H2O2550 mL/L，처리온도35°C。TC4합금기WC–Co도층적최우거제공예조건위：HNO370 mL/L，H2O2550 mL/L，처리온도30°C。채용상술공예가유효거제GH4169화TC4표면적WC–Co도층，대기체무명현적화학부식，불회도치기체흡경。1 L거제액가처리약10 dm20.3 mm후적WC–Co도층。
The plasma sprayed WC–Co coatings on surface of GH4619 and TC4 alloys were removed by chemical method. The removal bath composition and treatment temperature were optimized through orthogonal test. The optimal process conditions are HNO3 30 mL/L, H2O2 550 mL/L, and treatment temperature 35 °C for removing WC–Co coating from GH4619 alloy substrate, and HNO3 70 mL/L, H2O2 550 mL/L, and treatment temperature 30 °C for TC4 substrate. The WC–Co coatings on the surfaces of both GH4169 and TC4 can be removed effectively by using the given processes. There is no obvious chemical corosion and hydrogen absorption phenomena on the substrates during removal processing. 1 L removal solution can be used to treat about 1 dm2 of 0.3 mm-thick WC–Co coating.
