CAJ | 학술논문

晶圆背面减薄是集成电路后封装关键工艺，通过金刚石磨轮的磨削作用，对芯片背面的基体材料-硅材料去除一定的厚度，从而降低芯片厚度，改善芯片的散热效果，有利于后期的封装工艺。主要介绍了在晶圆减薄过程中的关键指标TTV 的影响因素，通过设备自动控制，进行工艺角度调整，能够减小晶圆TTV 值，从而提高晶圆磨削质量。
정원배면감박시집성전로후봉장관건공예，통과금강석마륜적마삭작용，대심편배면적기체재료-규재료거제일정적후도，종이강저심편후도，개선심편적산열효과，유리우후기적봉장공예。주요개소료재정원감박과정중적관건지표TTV 적영향인소，통과설비자동공제，진행공예각도조정，능구감소정원TTV 치，종이제고정원마삭질량。
Wafer grinding is the key technology of integrated circuit package. T hrough the role of the grinding diamond wheel,remove a certain thickness ofsilicon materialwhich is the substrate material, so it can decrease the thickness of the chip and improve chip heat dissipation effect, It is important to the encapsulation process of late. T his article mainly introduced the key measure in the process of waferthinning TTV ,Through the automatic controlequipment,we can adjustthe grinding Angle,so it can reduce the wafer TTV and improve the quality of wafer grinding.