电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2015年
3期
38-43
,共6页
孟晓%张海鹏%林弥%余育新%宁祥%吕伟锋%李阜骄%王利丹%余厉阳%王彬
孟曉%張海鵬%林瀰%餘育新%寧祥%呂偉鋒%李阜驕%王利丹%餘厲暘%王彬
맹효%장해붕%림미%여육신%저상%려위봉%리부교%왕리단%여려양%왕빈
共振隧穿二极管%GaAs/AlGaAs%对称双势垒%势阱宽度%势垒宽度%负阻特性
共振隧穿二極管%GaAs/AlGaAs%對稱雙勢壘%勢阱寬度%勢壘寬度%負阻特性
공진수천이겁관%GaAs/AlGaAs%대칭쌍세루%세정관도%세루관도%부조특성
RTD%GaAs/AlGaAs%symmetric DBS%well width%barrier width%NDR
目前共振隧穿二极管(RTD)多值逻辑电路研究采用多个MOSFETs组合,以逼近RTD特性,这是现有逻辑功能验证的不足。针对该问题,通过建立对称双势垒RTD电子输运的解析模型,进而采用SILVACO TCAD对GaAs/AlGaAs基对称DBS RTD器件的电学特性进行仿真实验研究。根据仿真实验的结果分析总结了势阱和势垒宽度对GaAs/AlGaAs基对称DBS RTD负阻特性影响的规律,并根据MVL电路设计应用的低压、低功耗、适当峰谷电流比和工艺可实现性等要求,通过大量的仿真优化实验提出采用GaAs/AlGaAs基对称DBS RTD实现多值逻辑电路设计所需的对称DBS RTD器件设计参数窗口。
目前共振隧穿二極管(RTD)多值邏輯電路研究採用多箇MOSFETs組閤,以逼近RTD特性,這是現有邏輯功能驗證的不足。針對該問題,通過建立對稱雙勢壘RTD電子輸運的解析模型,進而採用SILVACO TCAD對GaAs/AlGaAs基對稱DBS RTD器件的電學特性進行倣真實驗研究。根據倣真實驗的結果分析總結瞭勢阱和勢壘寬度對GaAs/AlGaAs基對稱DBS RTD負阻特性影響的規律,併根據MVL電路設計應用的低壓、低功耗、適噹峰穀電流比和工藝可實現性等要求,通過大量的倣真優化實驗提齣採用GaAs/AlGaAs基對稱DBS RTD實現多值邏輯電路設計所需的對稱DBS RTD器件設計參數窗口。
목전공진수천이겁관(RTD)다치라집전로연구채용다개MOSFETs조합,이핍근RTD특성,저시현유라집공능험증적불족。침대해문제,통과건립대칭쌍세루RTD전자수운적해석모형,진이채용SILVACO TCAD대GaAs/AlGaAs기대칭DBS RTD기건적전학특성진행방진실험연구。근거방진실험적결과분석총결료세정화세루관도대GaAs/AlGaAs기대칭DBS RTD부조특성영향적규률,병근거MVL전로설계응용적저압、저공모、괄당봉곡전류비화공예가실현성등요구,통과대량적방진우화실험제출채용GaAs/AlGaAs기대칭DBS RTD실현다치라집전로설계소수적대칭DBS RTD기건설계삼수창구。
It is featured of negative differential resistance characteristic with two bistable states and self-locking phenomena, high-speed and low power operation. These advantages make it very suitable for applications of high-speed analog and multivalued logic circuits. Aiming to the disadvantage that the characteristic of RTD was approximated by combination of several MOSFETs for the research of MLV circuits, the principle of electron transportation in the RTD was summarized in the paper, based on which an analysis model on transportion properties of symmetric double barriers RTD was simply described. Then, electrical properties of symmetric DBS RTD device based on GaAs/AlGaAs was studied extensively by simulation experiments with SILVACO TCAD. According to discussions and analyses of the obtained experimental results, the laws in impact of barrier and well width on negative differential resistor(NDR) characteristic of the GaAs/AlGaAs based DBS RTD were generalized. By considering the requirements of low-voltage and low power, appropriate peak current ratio, process feasibly and so on for MVL circuit applications, parameters design window of the GaAs/AlGaAs based DBS RTD was put forward.