CAJ | 학술논문

主要研究了编程参数对MTM反熔丝单元编程特性的影响，包括编程电压、编程电流、编程次数等。结果表明在满足最低编程电压条件下，编程电压的增大对反熔丝编程电阻无显著影响。编程电流对编程电阻的影响较大，编程电流越大，反熔丝编程电阻越小。编程次数的增多可减小编程电阻，但离散性增大。
주요연구료편정삼수대MTM반용사단원편정특성적영향，포괄편정전압、편정전류、편정차수등。결과표명재만족최저편정전압조건하，편정전압적증대대반용사편정전조무현저영향。편정전류대편정전조적영향교대，편정전류월대，반용사편정전조월소。편정차수적증다가감소편정전조，단리산성증대。
The paper mainly studies the factors that affect the characteristics of metal to metal antifuse cell, such as programming voltage, programming current, and the number of programming times. The results shows that increasing the programming voltage has no signiifcant effect on the on-state resistance, programming current has a signiifcant impact on the on-state resistance, the-on state resistance decreases as the programming current increases. In addition, the on-state resistance decreases with the increases of the programming times, but the dispersion increases.