CAJ | 학술논문

提出一种基于SMIC 65 nm标准CMOS工艺库的高精度电压参考源电路。对3种不同类型偏置于亚阈值区的NMOSFET进行了讨论，采用无电阻温度补偿对温度进行高阶补偿,可以减小对工艺、电压、温度的敏感性。仿真结果表明：在不同工艺角下，电源电压、温度使基准电压Vref的变化仅为±1.36%。电压参考源的温度系数大约为4.5×10-6℃-1，电源线性调制率为2.1% mV·V-1，最小工作电压仅为0.56 V。
제출일충기우SMIC 65 nm표준CMOS공예고적고정도전압삼고원전로。대3충불동류형편치우아역치구적NMOSFET진행료토론，채용무전조온도보상대온도진행고계보상,가이감소대공예、전압、온도적민감성。방진결과표명：재불동공예각하，전원전압、온도사기준전압Vref적변화부위±1.36%。전압삼고원적온도계수대약위4.5×10-6℃-1，전원선성조제솔위2.1% mV·V-1，최소공작전압부위0.56 V。
The paper presents a pure CMOS high precision voltage reference circuit based on the sub-threshold MOSFETs with the SMIC 65 nm standard CMOS process technique. Three different types of NMOSFETs and further resister-less temperature compensation are used to reduce process, voltage and temperature(PVT)sensitivity. Simulation result shows that voltage and temperature varies have little effect on the current according different process corners(Vref variation is only ±1.36%). Temperature and power supply sensitivity of the reference voltage is 4.5×10-6℃-1(-500~1500℃)and 2.1% mV·V-1. In addition, the supply voltage is about 0.56 V.