CAJ | 학술논문

绝缘栅型双极性晶体管(insulated gate bipolar transistor，IGBT)模块由于线路杂散电感的存在使得在开通和关断的瞬态过程中产生过大的电压尖峰，过压会使IGBT芯片的集电极电流增大从而导致结温上升，且其是导致IGBT模块失效的一个重要因素，通过有限元仿真软件Ansoft Q3D Extractor对键合线结构IGBT模块的杂散参数进行计算并对其封装结构进行优化，设计可有效降低IGBT模块杂散参数的平板封装结构，结果显示平板封装IGBT模块的主回路杂散电感为11.365 nH，电阻为0.409 m?，与键合线结构IGBT模块相比，杂散电感降低55.1%，电阻降低13.2%。
절연책형쌍겁성정체관(insulated gate bipolar transistor，IGBT)모괴유우선로잡산전감적존재사득재개통화관단적순태과정중산생과대적전압첨봉，과압회사IGBT심편적집전겁전류증대종이도치결온상승，차기시도치IGBT모괴실효적일개중요인소，통과유한원방진연건Ansoft Q3D Extractor대건합선결구IGBT모괴적잡산삼수진행계산병대기봉장결구진행우화，설계가유효강저IGBT모괴잡산삼수적평판봉장결구，결과현시평판봉장IGBT모괴적주회로잡산전감위11.365 nH，전조위0.409 m?，여건합선결구IGBT모괴상비，잡산전감강저55.1%，전조강저13.2%。
ABSTRACT:Due to the existence of the circuit stray inductance in insulated gate bipolar transistor (IGBT) modules, large voltage spikes caused in the transient process of the turn-on and turn-off can make the collector current of IGBT chips increase and lead to junction temperature rise. Voltage spike is an important factor which can cause IGBT modules failure. The finite element simulation software Ansoft Q3D Extractor is used to calculate the stray parameters of wire bonding IGBT module and optimize its packaging structure. IGBT module with planar packaging structure is designed which can effectively reduce the stray parameters of IGBT module. Results show that stray inductance of the main loop of the planar packaging IGBT module is 11.365 nH, the resistance is 0.409 m ?, and compared with wire bonding structure of IGBT module, stray inductance is reduced by 55.1%, the resistance is reduced by 13.2%.