CAJ | 학술논문

采用真空热蒸发方法在普通玻璃基底上制备 CuIn0．7 Al0．3 Se2(CIAS)薄膜,并对之进行450℃真空硒化退火处理.结果表明,制备的 CIAS 薄膜具有黄铜矿结构并且以(112)晶面优先生长.真空硒化退火后,薄膜晶体结构更完整,晶粒长大,成分分布均匀,更接近 CIAS 晶体的化学计量比.薄膜为 P 型半导体,退火后的薄膜禁带宽度减小至1．38 eV,带电粒子数下降至2．41E ＋17 cm－3,带电粒子迁移率增加至5．29 cm2/(N·s),电阻率升高至4．9Ω·cm.
채용진공열증발방법재보통파리기저상제비 CuIn0．7 Al0．3 Se2(CIAS)박막,병대지진행450℃진공서화퇴화처리.결과표명,제비적 CIAS 박막구유황동광결구병차이(112)정면우선생장.진공서화퇴화후,박막정체결구경완정,정립장대,성분분포균균,경접근 CIAS 정체적화학계량비.박막위 P 형반도체,퇴화후적박막금대관도감소지1．38 eV,대전입자수하강지2．41E ＋17 cm－3,대전입자천이솔증가지5．29 cm2/(N·s),전조솔승고지4．9Ω·cm.
CuIn0.7 Al0.3 Se2 (CIAS)thin films were prepared by vacuum thermal evaporation method on glass sub-strate,and annealed at 450 ℃ in selenium and nitrogen atmosphere in vacuum.The results showed thatCIAS thin films were with chalcopyrite structure and the main preferred orientation was (1 12).After selenium annea-ling,the lattices became integrated,crystal grain sizes grown,the distribution of the composition uniformed and the composition closertothe stoichiometric ratio of the CIAS.The CIAS film wasp-type semiconductor.The band gap of the annealed film was reduced to 1.38 eV.The charged carriers’concentration of the annealed films de-creased to 2.41E+ 17 cm-3 ,the mobility and resistivity increased to 5.29 cm2/(N·s)and 4.9 Ω· cm,respec-tively.