CAJ | 학술논문

为了提高SiGe异质结双极型晶体管( heterojunction bipolar transistors, HBTs)电流增益和特征频率温度热稳定性,首先研究基区杂质浓度分布对基区Ge组分分布为矩形分布的SiGe HBT电流增益和特征频率温度敏感性的影响,基区峰值浓度位置逐渐向集电极靠近可削弱器件的电流增益和特征频率对温度变化的敏感性。随后在选取基区峰值杂质浓度靠近集电极处分布的基础上,研究基区Ge组分分布对SiGe HBT的电流增益和特征频率温度敏感性的影响,减小基区发射极侧Ge组分和增加基区Ge组分梯度可削弱SiGe HBT的电流增益对温度变化的敏感性,增加基区发射极侧Ge组分的摩尔分数和减小基区Ge组分梯度可削弱SiGe HBT的特征频率对温度变化的敏感性。在此研究结果基础上,提出了一种新型基区Ge组分分布的SiGe HBT,它拥有较高的电流增益和特征频率且其温度敏感性较弱。
위료제고SiGe이질결쌍겁형정체관( heterojunction bipolar transistors, HBTs)전류증익화특정빈솔온도열은정성,수선연구기구잡질농도분포대기구Ge조분분포위구형분포적SiGe HBT전류증익화특정빈솔온도민감성적영향,기구봉치농도위치축점향집전겁고근가삭약기건적전류증익화특정빈솔대온도변화적민감성。수후재선취기구봉치잡질농도고근집전겁처분포적기출상,연구기구Ge조분분포대SiGe HBT적전류증익화특정빈솔온도민감성적영향,감소기구발사겁측Ge조분화증가기구Ge조분제도가삭약SiGe HBT적전류증익대온도변화적민감성,증가기구발사겁측Ge조분적마이분수화감소기구Ge조분제도가삭약SiGe HBT적특정빈솔대온도변화적민감성。재차연구결과기출상,제출료일충신형기구Ge조분분포적SiGe HBT,타옹유교고적전류증익화특정빈솔차기온도민감성교약。
To improve the thermal stability of curvent gain β and cut-off frequency fT in SiGe heterojunction bipolur transistors( HBTs) , the impacts of doping profile in the base of SiGe HBT with the box Ge profile on the temperature sensitivity of current gain β and cut-off frequency fT are investigated firstly. It can be found that with the doping peak concentration in the base gradually approaching to the collector,β and fT of HBT decrease slowly as temperature increases. Then the impacts of Ge profile across the base of SiGe HBT with the base peak concentration approaching to the collector on the temperature sensitivity of current gain β and cut-off frequency fT are investigated. It can be found that reducing Ge fraction at the emitter end of the base and increasing grading of the Ge across the base can weaken the sensitivity ofβto temperature, and reducing grading of the Ge across the base and increasing Ge fraction at the emitter end of the base can weaken the sensitivity of fT to temperature. Based on these results, a novel segmented step box (SSB) Ge profile is proposed, which possesses modestβand fT, and weak temperature sensitivity of current gain and cut-off frequency.