南阳师范学院学报
南暘師範學院學報
남양사범학원학보
JOURNAL OF NANYANG TEACHERS COLLEGE
2015年
3期
12-15
,共4页
刘赐德%钱明%李心豪%丁楠%刘旭焱
劉賜德%錢明%李心豪%丁楠%劉旭焱
류사덕%전명%리심호%정남%류욱염
数值模拟%栅介质厚度%驱动电流%阈值电压
數值模擬%柵介質厚度%驅動電流%閾值電壓
수치모의%책개질후도%구동전류%역치전압
numerical simulation%gate oxide thickness%drive current%threshold voltage
展开了高k栅介质厚度对MOS器件特性影响的数值模拟研究。利用有限元数值分析手段,分析了栅介质厚度对MOS管驱动电流和阈值电压的影响,得到在不同栅介质厚度值情况下对应的输出特性曲线和转移特性曲线以及不同k值下的漏端电流。结果表明,减小栅介质层厚度,MOS管的驱动电流持续增加,阈值电压也显著下降。同时,在一定范围内随着k值的增大MOS管的漏端电流持续增加。
展開瞭高k柵介質厚度對MOS器件特性影響的數值模擬研究。利用有限元數值分析手段,分析瞭柵介質厚度對MOS管驅動電流和閾值電壓的影響,得到在不同柵介質厚度值情況下對應的輸齣特性麯線和轉移特性麯線以及不同k值下的漏耑電流。結果錶明,減小柵介質層厚度,MOS管的驅動電流持續增加,閾值電壓也顯著下降。同時,在一定範圍內隨著k值的增大MOS管的漏耑電流持續增加。
전개료고k책개질후도대MOS기건특성영향적수치모의연구。이용유한원수치분석수단,분석료책개질후도대MOS관구동전류화역치전압적영향,득도재불동책개질후도치정황하대응적수출특성곡선화전이특성곡선이급불동k치하적루단전류。결과표명,감소책개질층후도,MOS관적구동전류지속증가,역치전압야현저하강。동시,재일정범위내수착k치적증대MOS관적루단전류지속증가。
The influence of the high-k gate dielectric thickness to MOS device characteristics was studied by nu-merical analysis in this paper. Based on numerical analysis of nonlinear finite element method, the effect of die-lectric thickness on drive current and threshold voltage of MOS devices was evaluated. Therefore, the output char-acteristic curves, transfer characteristic curves and drain current as a function of k value were obtained. The re-sults show that when the gate dielectric thickness decreased, the drive current continuously increased and the threshold voltage decreased significantly. Meanwhile, the drain current enhanced continuously as the k value in-creased in a certain range.