CAJ | 학술논문

展开了高k栅介质厚度对MOS器件特性影响的数值模拟研究。利用有限元数值分析手段,分析了栅介质厚度对MOS管驱动电流和阈值电压的影响,得到在不同栅介质厚度值情况下对应的输出特性曲线和转移特性曲线以及不同k值下的漏端电流。结果表明,减小栅介质层厚度,MOS管的驱动电流持续增加,阈值电压也显著下降。同时,在一定范围内随着k值的增大MOS管的漏端电流持续增加。
전개료고k책개질후도대MOS기건특성영향적수치모의연구。이용유한원수치분석수단,분석료책개질후도대MOS관구동전류화역치전압적영향,득도재불동책개질후도치정황하대응적수출특성곡선화전이특성곡선이급불동k치하적루단전류。결과표명,감소책개질층후도,MOS관적구동전류지속증가,역치전압야현저하강。동시,재일정범위내수착k치적증대MOS관적루단전류지속증가。
The influence of the high-k gate dielectric thickness to MOS device characteristics was studied by nu-merical analysis in this paper. Based on numerical analysis of nonlinear finite element method, the effect of die-lectric thickness on drive current and threshold voltage of MOS devices was evaluated. Therefore, the output char-acteristic curves, transfer characteristic curves and drain current as a function of k value were obtained. The re-sults show that when the gate dielectric thickness decreased, the drive current continuously increased and the threshold voltage decreased significantly. Meanwhile, the drain current enhanced continuously as the k value in-creased in a certain range.