CAJ | 학술논문

以氧化锌（ ZnO）掺杂氧化镓（ Ga2 O3）的陶瓷靶作为溅射靶材，采用射频磁控溅射技术在玻璃衬底上制备了透明导电的掺镓氧化锌（ ZnO：Ga）薄膜．通过X射线衍射仪测试研究了衬底温度对薄膜结晶性能及其残余应力的影响．研究结果表明：所有ZnO：Ga薄膜均为六角纤锌矿型的多晶结构并具有（002）方向的择优取向特性，其结晶性能和残余应力与衬底温度密切相关．随着衬底温度的升高，薄膜的（002）择优取向程度和晶粒尺寸呈现出先增大后减小的变化趋势，而薄膜的残余压应力则单调减小．当衬底温度为400℃时，ZnO：Ga薄膜具有最大的晶粒尺寸（75．1 nm）、最大的织构系数TC（002）（2．995）、较小的压应力（－0．185 GPa）和最好的结晶性能．
이양화자（ ZnO）참잡양화가（ Ga2 O3）적도자파작위천사파재，채용사빈자공천사기술재파리츤저상제비료투명도전적참가양화자（ ZnO：Ga）박막．통과X사선연사의측시연구료츤저온도대박막결정성능급기잔여응력적영향．연구결과표명：소유ZnO：Ga박막균위륙각섬자광형적다정결구병구유（002）방향적택우취향특성，기결정성능화잔여응력여츤저온도밀절상관．수착츤저온도적승고，박막적（002）택우취향정도화정립척촌정현출선증대후감소적변화추세，이박막적잔여압응력칙단조감소．당츤저온도위400℃시，ZnO：Ga박막구유최대적정립척촌（75．1 nm）、최대적직구계수TC（002）（2．995）、교소적압응력（－0．185 GPa）화최호적결정성능．
The gallium-doped zinc oxide ( ZnO:Ga) thin films were prepared on glass substrates by magnetron sputtering method using the ceramic target fabricated by sintering the mixture of ZnO and Ga2 O3 nanometer powder.The substrate temperature was varied from 200 ℃ to 500 ℃ during the magnetron sputtering process.The crystal quality and residual stress of the deposited films were investigated by X-ray diffractometer.The results indicated that the crystal quality and residual stress of the samples are closely related to the substrate temperature.As the substrate temperature increasing, the degree of preferred orientation, average grain size and residual stress of the samples change nonmonotonically.The thin film deposited at the substrate temperature of 400 ℃ has the largest grain size (75.1 nm), the maximum texture coefficient TC(002) (2.995), the lower compressive stress (-0.185 GPa) and the best crystal quality.