CAJ | 학술논문

以CdCl2和Na2S2O3混合溶液为电解液，采用电沉积法在ITO导电玻璃基片上制备了CdS纳米薄膜。讨论了沉积电压、热处理等工艺因素对薄膜的影响。分别采用X射线衍射仪(XRD)，电子色散能谱仪(EDS)、扫描电子显微镜(SEM)和原子力显微镜(AFM)分析了硫化镉薄膜的物相结构和表面形貌。结果表明制备的硫化镉薄膜热处理前为非晶相，热处理后的硫化镉薄膜出现六方纤锌矿CdS相。沉积电压非常重要，小于4.0 V时，制备的硫化镉薄膜由六方纤锌矿CdS相和六方相金属Cd组成。
이CdCl2화Na2S2O3혼합용액위전해액，채용전침적법재ITO도전파리기편상제비료CdS납미박막。토론료침적전압、열처리등공예인소대박막적영향。분별채용X사선연사의(XRD)，전자색산능보의(EDS)、소묘전자현미경(SEM)화원자력현미경(AFM)분석료류화력박막적물상결구화표면형모。결과표명제비적류화력박막열처리전위비정상，열처리후적류화력박막출현륙방섬자광CdS상。침적전압비상중요，소우4.0 V시，제비적류화력박막유륙방섬자광CdS상화륙방상금속Cd조성。
Electrochemical method was adopted to deposit CdS thin iflms on the surface of ITO glass using CdCl2 and Na2S2O3 as source materials. The inlfuence of deposition voltage and heat-treatment on the phase compositions, surface morphologies properties of the iflms, the phase, microstructure and element distribution of CdS thin iflms were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy techniques. The results showed that the as-prepared cadmium sulifde thin iflm exhibits amorphous phase before thermal processing and a hexagonal wurtzite CdS structure after the treatment. Deposition voltage is very important, and the cadmium sulifde thin iflms prepared under the deposition voltage of less than 4.0 V are composed of hexagonal wurtzite CdS phases and hexagonal Cd phase.