表面技术
錶麵技術
표면기술
SURFACE TECHNOLOGY
2015年
5期
48-52,101
,共6页
磁控溅射%工艺参数%TiO2 薄膜%结晶性
磁控濺射%工藝參數%TiO2 薄膜%結晶性
자공천사%공예삼수%TiO2 박막%결정성
magnetron sputtering%process parameters%TiO2 thin films%crystalline property
目的：探究TiO2薄膜结晶性与工艺参数之间的规律。方法采用直流反应磁控溅射法,改变工艺条件(样品位置、溅射功率、氧气分压、是否开转架、沉积温度以及是否退火),在普通载玻片基底上制备TiO2薄膜,并利用XRD和SEM对不同工艺参数下获得的TiO2薄膜进行分析。结果在靶基距固定的情况下,仅改变样品悬挂的上下位置时,薄膜的结晶性差别不大。随着溅射功率在一定范围内增大,薄膜的结晶性越来越好(趋于锐钛矿晶型)。与氧气分压为5%时相比,10%时的薄膜结晶性更优；与开转架时相比,不开转架时薄膜的结晶性更优。沉积温度在300,350℃两者之间变化时,对薄膜的结晶性影响不大。退火后薄膜的结晶性优于未退火薄膜。结论样品位置、沉积温度对于TiO2薄膜的结晶性影响不大；氧气分压、是否开转架对TiO2薄膜的结晶性有一定影响；溅射功率、退火与否对TiO2薄膜的结晶性影响较大,并且退火后出现金红石相。
目的：探究TiO2薄膜結晶性與工藝參數之間的規律。方法採用直流反應磁控濺射法,改變工藝條件(樣品位置、濺射功率、氧氣分壓、是否開轉架、沉積溫度以及是否退火),在普通載玻片基底上製備TiO2薄膜,併利用XRD和SEM對不同工藝參數下穫得的TiO2薄膜進行分析。結果在靶基距固定的情況下,僅改變樣品懸掛的上下位置時,薄膜的結晶性差彆不大。隨著濺射功率在一定範圍內增大,薄膜的結晶性越來越好(趨于銳鈦礦晶型)。與氧氣分壓為5%時相比,10%時的薄膜結晶性更優；與開轉架時相比,不開轉架時薄膜的結晶性更優。沉積溫度在300,350℃兩者之間變化時,對薄膜的結晶性影響不大。退火後薄膜的結晶性優于未退火薄膜。結論樣品位置、沉積溫度對于TiO2薄膜的結晶性影響不大；氧氣分壓、是否開轉架對TiO2薄膜的結晶性有一定影響；濺射功率、退火與否對TiO2薄膜的結晶性影響較大,併且退火後齣現金紅石相。
목적：탐구TiO2박막결정성여공예삼수지간적규률。방법채용직류반응자공천사법,개변공예조건(양품위치、천사공솔、양기분압、시부개전가、침적온도이급시부퇴화),재보통재파편기저상제비TiO2박막,병이용XRD화SEM대불동공예삼수하획득적TiO2박막진행분석。결과재파기거고정적정황하,부개변양품현괘적상하위치시,박막적결정성차별불대。수착천사공솔재일정범위내증대,박막적결정성월래월호(추우예태광정형)。여양기분압위5%시상비,10%시적박막결정성경우；여개전가시상비,불개전가시박막적결정성경우。침적온도재300,350℃량자지간변화시,대박막적결정성영향불대。퇴화후박막적결정성우우미퇴화박막。결론양품위치、침적온도대우TiO2박막적결정성영향불대；양기분압、시부개전가대TiO2박막적결정성유일정영향；천사공솔、퇴화여부대TiO2박막적결정성영향교대,병차퇴화후출현금홍석상。
ABSTRACT:Objective To explore the pattern between the crystallization of TiO2 thin films and the process parameters. Methods The process conditions ( the position of the sample, sputtering power, oxygen partial pressure, the bogie, deposition temperature and annealing) were modified by the DC reactive magnetron sputtering method to prepare TiO2 thin films on the common slide glass substrate. TiO2 thin films under different process parameters were analyzed by XRD and SEM. Results In the case of fixed target-substrate distance, simply changing the sample suspension position had little influence on thin-film crystalline. As the sputtering power increased within a certain range, the film crystalline became better and better ( tending to anatase crystal) . Crystalline of the thin film whose oxygen partial pressure was 10% was better than that whose pressure was 5%. The thin film crystalline was superi-or when the turntable was not opened, compared to when the turntable was opened. Deposition temperature ( shifting between 300℃ and 350 ℃) made no difference to thin film crystalline. Crystalline of thin film annealed was superior to that not annealed. Conclusion Sample suspension position and deposition temperature have little effect on the crystalline property of TiO2 films. Oxy-gen partial pressure and opening of turntable have some impacts on the crystalline property of TiO2 films. Sputtering power and an-nealing have a greater influence on the crystallization of TiO2 thin film, the rutile crystal diffraction peaks appear after being an-nealed.
