光谱学与光谱分析
光譜學與光譜分析
광보학여광보분석
SPECTROSCOPY AND SPECTRAL ANALYSIS
2015年
5期
1383-1387
,共5页
魏小龙%徐浩军%林敏%苏晨
魏小龍%徐浩軍%林敏%囌晨
위소룡%서호군%림민%소신
等离子体隐身%盘香型%螺旋型%ICP%发射光谱%电子密度
等離子體隱身%盤香型%螺鏇型%ICP%髮射光譜%電子密度
등리자체은신%반향형%라선형%ICP%발사광보%전자밀도
Plasma stealth%Spiral-type%Planar-type%ICP%Emission spectrum%Electron density
IC P反应室或IC P质谱仪不同,IC P在用于衰减微波时,其腔体采用全密封石英结构,同时缺少静电屏蔽、金属衬底和磁场约束等条件,研究其内部电子密度等参数的分布对于等离子体局部隐身技术具有重要意义。利用光谱分析法,对两种典型IC P源(螺旋型和盘香型)在密闭石英立方体腔内 H模式下稳定放电的电子密度分布展开了对比试验研究。使用A r离子谱中476.45 nm谱线相对光谱强度变化研究了不同型ICP源的E—H模式跳变和功率耦合效率,通过非H谱线(Ar)的Stark展宽法,诊断了两种源的天线垂直平面上的二维电子密度分布。实验发现IC P在 H模下的电子密度分布受交变磁场产生的趋肤电流影响较大,趋肤深度随着放电功率的增大而减小,同时主等离子体区域体积缩小、电子密度增加,在天线的垂直面上,螺旋型源IC P电子密度呈中心轴对称型分布,盘香型源IC P呈双峰型分布。功率耦合效率受源天线形状及其容性耦合效应影响较大,光谱相对强度显示螺旋型源的功率耦合效率低于盘香型源。通过该实验方法,可以在石英立方腔体内得到最高电子密度范围为1.4×1017~2.5×1017 m -3的螺旋型ICP源和范围1.8×1017~3.0×1017 m-3的盘香型IC P源。
IC P反應室或IC P質譜儀不同,IC P在用于衰減微波時,其腔體採用全密封石英結構,同時缺少靜電屏蔽、金屬襯底和磁場約束等條件,研究其內部電子密度等參數的分佈對于等離子體跼部隱身技術具有重要意義。利用光譜分析法,對兩種典型IC P源(螺鏇型和盤香型)在密閉石英立方體腔內 H模式下穩定放電的電子密度分佈展開瞭對比試驗研究。使用A r離子譜中476.45 nm譜線相對光譜彊度變化研究瞭不同型ICP源的E—H模式跳變和功率耦閤效率,通過非H譜線(Ar)的Stark展寬法,診斷瞭兩種源的天線垂直平麵上的二維電子密度分佈。實驗髮現IC P在 H模下的電子密度分佈受交變磁場產生的趨膚電流影響較大,趨膚深度隨著放電功率的增大而減小,同時主等離子體區域體積縮小、電子密度增加,在天線的垂直麵上,螺鏇型源IC P電子密度呈中心軸對稱型分佈,盤香型源IC P呈雙峰型分佈。功率耦閤效率受源天線形狀及其容性耦閤效應影響較大,光譜相對彊度顯示螺鏇型源的功率耦閤效率低于盤香型源。通過該實驗方法,可以在石英立方腔體內得到最高電子密度範圍為1.4×1017~2.5×1017 m -3的螺鏇型ICP源和範圍1.8×1017~3.0×1017 m-3的盤香型IC P源。
IC P반응실혹IC P질보의불동,IC P재용우쇠감미파시,기강체채용전밀봉석영결구,동시결소정전병폐、금속츤저화자장약속등조건,연구기내부전자밀도등삼수적분포대우등리자체국부은신기술구유중요의의。이용광보분석법,대량충전형IC P원(라선형화반향형)재밀폐석영립방체강내 H모식하은정방전적전자밀도분포전개료대비시험연구。사용A r리자보중476.45 nm보선상대광보강도변화연구료불동형ICP원적E—H모식도변화공솔우합효솔,통과비H보선(Ar)적Stark전관법,진단료량충원적천선수직평면상적이유전자밀도분포。실험발현IC P재 H모하적전자밀도분포수교변자장산생적추부전류영향교대,추부심도수착방전공솔적증대이감소,동시주등리자체구역체적축소、전자밀도증가,재천선적수직면상,라선형원IC P전자밀도정중심축대칭형분포,반향형원IC P정쌍봉형분포。공솔우합효솔수원천선형상급기용성우합효응영향교대,광보상대강도현시라선형원적공솔우합효솔저우반향형원。통과해실험방법,가이재석영립방강체내득도최고전자밀도범위위1.4×1017~2.5×1017 m -3적라선형ICP원화범위1.8×1017~3.0×1017 m-3적반향형IC P원。
In the present paper ,the spectrum analytic method was used to comparatively study the ICP electron density distribu-tion through two typical ICP sources (spiral-type and planar-type) in closed quartz chamber .The E-H mode transition of induc-tively coupled plasma and power coupling efficiency were researched through the change in the relative intensity of argon ion spectral line (476.45 nm) .Electron density distribution on the antennas-vertical plane of different ICP source was calculated through non-hydrogen-like Stark broadening of spectral line method .The test results show that the ICP electronic density distri-bution in H-mode discharge is significantly impacted by skin current of alternating magnetic field .The skin depth decreases with the increase in discharge power .Meanwhile ,the bulk of the main plasma narrows and electron density increases .On the vertical plane of the antenna ,electron density distribution presents center-symmetry by spiral-ICP source and bimodal by planar-ICP source .The power coupling efficiency is directly affected by source antenna shape and capacitive coupling effect .The relative in-tensity of the argon spectrum shows that the power coupling efficiency of spiral-type source is lower than that of planar-type source .The proposed experimental method provides a way to obtain a plasma source in closed quartz cube chamber with the highest electron density ranging from 1.4 × 1017 to 2.5 × 1017 m -3 (spiral-ICP source) and 1.8 × 1017 to 3.0 × 1017 m -3 (planar-ICP source) .