广州化工
廣州化工
엄주화공
GUANGZHOU CHEMICAL INDUSTRY AND TECHNOLOGY
2015年
7期
57-59
,共3页
GaN%纳米线%光学性质
GaN%納米線%光學性質
GaN%납미선%광학성질
GaN%nanowires%optical provperties
采用Ga2 O3为Ga源，氨气为N源，通过高温化学气相沉积法制备了新颖的弯曲状GaN纳米线，六方纤锌矿结构，直径约70～100 nm，长度最长可达几十微米，大部分纳米线呈链状，其生长机制呈VLS生长模式。拉曼光谱表明声子振动带有变宽的特征，基于浅施主态向浅受主态的跃迁包括缺陷层、表面态或残留杂质的影响， PL发光在436 nm和467 nm的出现宽峰。
採用Ga2 O3為Ga源，氨氣為N源，通過高溫化學氣相沉積法製備瞭新穎的彎麯狀GaN納米線，六方纖鋅礦結構，直徑約70～100 nm，長度最長可達幾十微米，大部分納米線呈鏈狀，其生長機製呈VLS生長模式。拉曼光譜錶明聲子振動帶有變寬的特徵，基于淺施主態嚮淺受主態的躍遷包括缺陷層、錶麵態或殘留雜質的影響， PL髮光在436 nm和467 nm的齣現寬峰。
채용Ga2 O3위Ga원，안기위N원，통과고온화학기상침적법제비료신영적만곡상GaN납미선，륙방섬자광결구，직경약70～100 nm，장도최장가체궤십미미，대부분납미선정련상，기생장궤제정VLS생장모식。랍만광보표명성자진동대유변관적특정，기우천시주태향천수주태적약천포괄결함층、표면태혹잔류잡질적영향， PL발광재436 nm화467 nm적출현관봉。
Novel curving GaN nanowires were frbricated by the CVD technique under high temperature by using Ga2 O3 and NH3 as the Ga and N sources, respectively.The GaN nanowires with hexagonal wurtzite structure exhibited curving shape, and the width and length could reached 70~100 nm, and tens of micrometers.The growth of the GaN nanowires proceeded as the VLS model.Raman spectra showed that the phonon oscillation exhibited the broaden characterization and two wide peaks appeared at 436 and 467 nm, which was attributed to the transition of the shallow donor state to the acceptor one, including the defect layer, surface state or residual impurity.
