CAJ | 학술논문

制备了3.6，5.1和6.0 nm三种尺寸的胶体PbSe量子点，并对其光学特性进行实验研究。在室温条件下，实验发现小尺寸胶体PbSe量子点的光致发光光谱随温度升高发生红移；大尺寸胶体PbSe量子点的光致发光光谱随温度升高发生蓝移。以PbSe量子点温度依赖的光致发光光谱特性为基础，提出一种新型的集成电路芯片温度检测方法。这种新型的温度检测方法是将胶体PbSe量子点沉积在集成电路板表面，使用激光器发射出平行激光束，使芯片表面的胶体PbSe量子点层光致发光，通过红外光谱仪接收光致发光光谱，实现温度的检测；利用图像采集系统对芯片表面特定微小区域成像，实现微米尺度区域的温度检测。实验结果表明，测量精度为±3℃，其相对误差不大于5％。
제비료3.6，5.1화6.0 nm삼충척촌적효체PbSe양자점，병대기광학특성진행실험연구。재실온조건하，실험발현소척촌효체PbSe양자점적광치발광광보수온도승고발생홍이；대척촌효체PbSe양자점적광치발광광보수온도승고발생람이。이PbSe양자점온도의뢰적광치발광광보특성위기출，제출일충신형적집성전로심편온도검측방법。저충신형적온도검측방법시장효체PbSe양자점침적재집성전로판표면，사용격광기발사출평행격광속，사심편표면적효체PbSe양자점층광치발광，통과홍외광보의접수광치발광광보，실현온도적검측；이용도상채집계통대심편표면특정미소구역성상，실현미미척도구역적온도검측。실험결과표명，측량정도위±3℃，기상대오차불대우5％。
Colloidal PbSe QDs were prepared with the particle size of 3.6 ,5.1 and 6.0 nm ,and the temperature-dependent opti-cal properties of colloidal PbSe QDs were investigated .At the room temperature ,the experiment showed that there is red shift with increasing temperature;photoluminescence spectra of large size colloidal PbSe QDs is blue shifted with increasing tempera-ture .Proposed a temperature detection method of integrated circuit was proposed based on photoluminescence spectra of colloidal PbSe QDs .The method for temperature detection includes colloidal PbSe quantum dots deposited on the surface of the printed circuit board ,colloidal PbSe quantum dots of the surface are excited by the laser and infrared spectrometer receives photolumi-nescence spectra .Image acquisition system used for micron scale areas of temperature detection collects a tiny and specific areas imaging in the surface of chip .Experiments showed that the measurement accuracy is ± 3 ℃ and the relative error is less than 5% .