CAJ | 학술논문

采用现代材料分析测试方法，通过对高温高压 Fe-Ni-C-B 系合成出的含硼金刚石单晶及其金属包覆膜进行系统分析和表征，探寻含硼金刚石合成机理及生长机制。研究发现，添加在金属触媒中的硼以金属-碳-硼化合物的形式溶入金属包覆膜，作为含硼金刚石生长的直接碳/硼源，经金属中间相的催化，析出活性碳/硼原子(团)扩散至正在生长的金刚石单晶表面，促进金刚石的生长。而含硼金刚石则以一种层状生长的方式长大，这种层状生长的台阶来源前期以二维晶核为主，后期则以位错为主。活性碳/硼原子(团)扩散到达金刚石单晶表面，在生长台阶的前端被吸附，转变成为金刚石单晶的一部分。随着台阶的不断扩展，新的生长台阶在刚长成的晶面上继续形成，含硼金刚石单晶则以层状堆叠的方式完成长大过程。
채용현대재료분석측시방법，통과대고온고압 Fe-Ni-C-B 계합성출적함붕금강석단정급기금속포복막진행계통분석화표정，탐심함붕금강석합성궤리급생장궤제。연구발현，첨가재금속촉매중적붕이금속-탄-붕화합물적형식용입금속포복막，작위함붕금강석생장적직접탄/붕원，경금속중간상적최화，석출활성탄/붕원자(단)확산지정재생장적금강석단정표면，촉진금강석적생장。이함붕금강석칙이일충층상생장적방식장대，저충층상생장적태계래원전기이이유정핵위주，후기칙이위착위주。활성탄/붕원자(단)확산도체금강석단정표면，재생장태계적전단피흡부，전변성위금강석단정적일부분。수착태계적불단확전，신적생장태계재강장성적정면상계속형성，함붕금강석단정칙이층상퇴첩적방식완성장대과정。
In order to research on the synthesis mechanism and growth mechanism of the boron-doped diamond, the boron-doped diamond monocrystal synthesised from the HPHT Fe-Ni-C-B Series and its surrounded metallic film have been systematically analysed through modern materials analysis technology.The result shows that the boron element added into the metal catalyzer has been dissolved into the surrounded metallic film as a metal-carbon-boron compound.Being as the direct carbon/boron source for the growth of the boron-doped diamond,it was catalysed by intermetallic phase and the acti-vated carbon/boron atoms were extracted and spreaded onto the surface of the growing di-amond monocrystal to promote the growth of the diamond.The boron-doped diamond grow in a layered growth model.The source for this type of growth during the early stage comes from two dimensional crystal nucleus and from dislocation during the late stage. The activated carbon/boron atoms spread onto the surface of the diamond monocrystal and are absorbed at the front end of the growth step and then transformed into part of the diamond monocrystal.As the step continues to expand,new growth step continues to de-velop on the newly grown crystal surface while the boron-doped diamond monocrystal grows in a layered stack-based pattern.