CAJ | 학술논문

采用超高真空化学气相沉积( UHV/CVD)技术在Si衬底上外延生长了PIN结构多层Ge量子点探测器材料。 PIN探测器结构由N型Si衬底，多层Ge量子点吸收区，和原位掺杂P型Si盖层构成，电极分别制作于N-Si和P-Si上，以获得好的欧姆接触。制备的Si基Ge量子点光电探测器具有较低的暗电流密度(-1 V偏压下为7.35×10-6 A/cm2)，与Si相比，探测波长延伸到1.31μm波段。
채용초고진공화학기상침적( UHV/CVD)기술재Si츤저상외연생장료PIN결구다층Ge양자점탐측기재료。 PIN탐측기결구유N형Si츤저，다층Ge양자점흡수구，화원위참잡P형Si개층구성，전겁분별제작우N-Si화P-Si상，이획득호적구모접촉。제비적Si기Ge양자점광전탐측기구유교저적암전류밀도(-1 V편압하위7.35×10-6 A/cm2)，여Si상비，탐측파장연신도1.31μm파단。
The structure of multilayer Ge quantum dots( QDs) was eptaxial grown on Si substrate by ultra-high vacu-um chemical vapor deposition( UHV/CVD) technique for detector fabrication. The intrinsic multilayer Ge QDs were acted as an absorption region,while the N-Si substrate and the in situ capped P-Si layer were chosen for the forma-tion of ohmic contact. The fabricated photodetector has a low dark current density(7.35×10-6 A/cm2 at -1 V),and the wavelength limit is extended to 1.31 μm compared with Si photodetector.