电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2015年
6期
70-73,77
,共5页
赵玉红%张晓玲%孟庆端%张立文
趙玉紅%張曉玲%孟慶耑%張立文
조옥홍%장효령%맹경단%장립문
焦平面探测器%杨氏模量%体积分数%结构优化%多层材料%ANSYS
焦平麵探測器%楊氏模量%體積分數%結構優化%多層材料%ANSYS
초평면탐측기%양씨모량%체적분수%결구우화%다층재료%ANSYS
focal plane detector%Young's modulus%volume fraction%structure optimization%multi-layer material%ANSYS
为系统研究热冲击下InSb焦平面探测器的形变规律,需借助多层材料形变分析方程组求得其形变解析解。本文在分析、模拟双组份弹性材料均匀混合后其等效杨氏模量随体积分数变化趋势的基础上,借助有限元软件ANSYS对InSb焦平面探测器中间层等效杨氏模量的提取进行系统研究。分析结果表明,直接采用线弹性材料模型模拟的结果与真实材料的等效杨氏模量相去甚远,需用黏塑性模型方能给出符合实际的中间层等效杨氏模量;在InSb焦平面探测器典型结构设计中,中间层的等效杨氏模量随体积分数的演化规律可用线性方程描述,这为后续探测器结构优化提供了理论分析模型支撑。
為繫統研究熱遲擊下InSb焦平麵探測器的形變規律,需藉助多層材料形變分析方程組求得其形變解析解。本文在分析、模擬雙組份彈性材料均勻混閤後其等效楊氏模量隨體積分數變化趨勢的基礎上,藉助有限元軟件ANSYS對InSb焦平麵探測器中間層等效楊氏模量的提取進行繫統研究。分析結果錶明,直接採用線彈性材料模型模擬的結果與真實材料的等效楊氏模量相去甚遠,需用黏塑性模型方能給齣符閤實際的中間層等效楊氏模量;在InSb焦平麵探測器典型結構設計中,中間層的等效楊氏模量隨體積分數的縯化規律可用線性方程描述,這為後續探測器結構優化提供瞭理論分析模型支撐。
위계통연구열충격하InSb초평면탐측기적형변규률,수차조다층재료형변분석방정조구득기형변해석해。본문재분석、모의쌍조빈탄성재료균균혼합후기등효양씨모량수체적분수변화추세적기출상,차조유한원연건ANSYS대InSb초평면탐측기중간층등효양씨모량적제취진행계통연구。분석결과표명,직접채용선탄성재료모형모의적결과여진실재료적등효양씨모량상거심원,수용점소성모형방능급출부합실제적중간층등효양씨모량;재InSb초평면탐측기전형결구설계중,중간층적등효양씨모량수체적분수적연화규률가용선성방정묘술,저위후속탐측기결구우화제공료이론분석모형지탱。
In order to explore the deformation rules of InSb infrared focal plane array detector under the thermal shock, We need solve the equation set describing the deformation of a multi-layer material system. In the equation set, the equivalent Young’s modulus of the interlayer in the InSb infrared focal plane array detector is unknown. So in this paper, We firstly analyze the changing tendency of the equivalent Young's modulus of the interlayer mixed uniformly by two elastic materials, which is determined by the material volume fraction. Secondly, employing the finite element method, we calculate the equivalent young's modulus of the interlayer in InSb infrared focal plane array detector. Analysis results show that the equivalent young's modulus calculated directly by two linear elastic material models is larger than its real value, and the viscoplacticity model, describing the stress-strain character of the indium bump array, should be employed to acquire its real value. Finally, we draw a conclusion that in the interlayer of the InSb infrared focal plane array detector, the relationship between its equivalent young's modulus and the indium volume fraction can be described with a linear equation. This finding provides a theoretical analysis model to optimize the structure of InSb infrared focal plane array detector in the following study.