电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2015年
6期
66-69
,共4页
刘铭%冯全源%陈晓培%庄圣贤
劉銘%馮全源%陳曉培%莊聖賢
류명%풍전원%진효배%장골현
终端结构%场限环%场板%结深%表面电场%击穿电压
終耑結構%場限環%場闆%結深%錶麵電場%擊穿電壓
종단결구%장한배%장판%결심%표면전장%격천전압
termination structure%field limiting ring%field plate%junction depth%surface electric field%breakdown voltage
设计了一款800 V VDMOS终端结构，采用场限环（FLR）与场板（FP）相结合的方式，在场限环上添加多晶硅场板与金属场板，有效地降低了表面电场峰值。通过调整终端结构，在135μm的有效终端长度上实现了848 V的击穿电压，最大表面电场为2.34×105 V/cm，小于工业界判断器件击穿场强标准（2.5×105 V/cm），且电场分布比较均匀，终端结构的稳定性和可靠性高。
設計瞭一款800 V VDMOS終耑結構，採用場限環（FLR）與場闆（FP）相結閤的方式，在場限環上添加多晶硅場闆與金屬場闆，有效地降低瞭錶麵電場峰值。通過調整終耑結構，在135μm的有效終耑長度上實現瞭848 V的擊穿電壓，最大錶麵電場為2.34×105 V/cm，小于工業界判斷器件擊穿場彊標準（2.5×105 V/cm），且電場分佈比較均勻，終耑結構的穩定性和可靠性高。
설계료일관800 V VDMOS종단결구，채용장한배（FLR）여장판（FP）상결합적방식，재장한배상첨가다정규장판여금속장판，유효지강저료표면전장봉치。통과조정종단결구，재135μm적유효종단장도상실현료848 V적격천전압，최대표면전장위2.34×105 V/cm，소우공업계판단기건격천장강표준（2.5×105 V/cm），차전장분포비교균균，종단결구적은정성화가고성고。
The termination structure of 800 V VDMOS was designed, which consists of field limiting ring (FLR) and field plate (FP). The surface electric field peak value could be reduced effectively by adding poly silicon FP and metal FP on the FLR. By regulating the termination structure, the breakdown voltage 848 V is achieved with 135μm effective length on termination structure. The maximum value of surface electric field is 2.34×105 V/cm and less than the critical electric field intensity (2.5×105 V/cm) in the industry. The distribution of surface electric field peaks is relatively uniform, which increases the stability and reliability of the termination structure.
