电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2015年
5期
24-27
,共4页
郭安强%刘倩倩%金亚梅%王志伟
郭安彊%劉倩倩%金亞梅%王誌偉
곽안강%류천천%금아매%왕지위
BiCMOS%宽动态%可变增益放大器
BiCMOS%寬動態%可變增益放大器
BiCMOS%관동태%가변증익방대기
BiCMOS%wide dynamic range%variable gain ampliifer
在通信接收机中,当接收的信号强度变化很大时,要求接收机前端的增益随接收信号强度在很宽的范围内自动变化,以输出稳定信号,因此高性能接收机对可变增益放大器提出了更高的要求。设计基于BiCMOS工艺,采用差分输入共射级结构,对宽动态可变增益放大器进行了研究与设计,通过MOS开关改变集电极和发射极电阻以及延迟控制技术,达到宽动态增益的效果。仿真结果表明,三级放大器的增益动态范围为0~65 dB,频率范围为20~90 MHz。
在通信接收機中,噹接收的信號彊度變化很大時,要求接收機前耑的增益隨接收信號彊度在很寬的範圍內自動變化,以輸齣穩定信號,因此高性能接收機對可變增益放大器提齣瞭更高的要求。設計基于BiCMOS工藝,採用差分輸入共射級結構,對寬動態可變增益放大器進行瞭研究與設計,通過MOS開關改變集電極和髮射極電阻以及延遲控製技術,達到寬動態增益的效果。倣真結果錶明,三級放大器的增益動態範圍為0~65 dB,頻率範圍為20~90 MHz。
재통신접수궤중,당접수적신호강도변화흔대시,요구접수궤전단적증익수접수신호강도재흔관적범위내자동변화,이수출은정신호,인차고성능접수궤대가변증익방대기제출료경고적요구。설계기우BiCMOS공예,채용차분수입공사급결구,대관동태가변증익방대기진행료연구여설계,통과MOS개관개변집전겁화발사겁전조이급연지공제기술,체도관동태증익적효과。방진결과표명,삼급방대기적증익동태범위위0~65 dB,빈솔범위위20~90 MHz。
In order to obtain the stable signal, it demands the gain of receiver automatically change when the received signal changes within a wide dynamic range in the communication receiver. It means that high performance receiver should put forward stricter requirements to variable gain ampliifer. The paper researches and designs the structure for wide dynamic variable gain ampliifer. Based on BiCMOS, this essay aims at the research and design of the wide dynamic variable gain ampliifer with the differential input common emitter structure. The MOS switch which changes the resistance of collector and emitter together with delay control technology contributes to the wide dynamic gain. The chip is simulated by using Cadence’s Spectre software and implementted by using CSMC 0.5μm process. Simulation results indicate that dynamic range of gain is from 0 to 60 dB;it receives the frequency from 20 MHz to 90 MHz, and has the power dissipation less than 20 mW.